HCNR201-300E Avago Technologies US Inc., HCNR201-300E Datasheet - Page 8

• Manufacturer Part Number: HCNR201-300E
• Description: OPTOCOUPLER ANLG DC-1MHZ GW 8SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of HCNR201-300E

• Output Type: Linear Photovoltaic
• Input Type: DC
• Package / Case: 8-SMD Gull Wing
• Number Of Channels: 1
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 0.36% @ 10mA
• Current Transfer Ratio (max): 0.72% @ 10mA
• Current - Dc Forward (if): 25mA
• Mounting Type: Surface Mount, Gull Wing
• Current Transfer Ratio: 0.36 % to 0.72 %
• Forward Current: 1 mA to 20 mA
• Isolation Voltage: 5000 Vrms
• Minimum Forward Diode Voltage: 1.2 V
• Output Device: Photodiode
• Configuration: 1 Channel
• Maximum Forward Diode Voltage: 1.95 V
• Maximum Reverse Diode Voltage: 2.5 V
• Maximum Input Diode Current: 25 mA
• Maximum Power Dissipation: 60 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Photodiode
• Input Current: 20mA
• Output Voltage: 15V
• Opto Case Style: SMD
• No. Of Pins: 8
• Forward Voltage: 1.6V
• Rohs Compliant: Yes
• Forward Current If: 25mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Current - Output / Channel: -
• Vce Saturation (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 516-1609-5

Electrical Specifi cations
T
8
A
Parameter
Transfer Gain
Temperature
Coeffi cient of
Transfer Gain
DC NonLinearity
(Best Fit)
DC Nonlinearity
(Ends Fit)
Input Photo-
diode Current
Transfer Ratio
(I
Temperature
Coeffi cient
of K
Photodiode
Leakage Current
Photodiode
Reverse Break-
down Voltage
Photodiode
Capacitance
LED Forward
Voltage
LED Reverse
Breakdown
Voltage
Temperature
Coeffi cient of
Forward Voltage
LED Junction
Capacitance
= 25°C unless otherwise specifi ed.
PD1
/I
1
F
)
ΔK
ΔK
ΔV
Symbol
BV
NL
NL
C
C
BV
F
K
3
K
V
1
I
LK
/ΔT
LED
/ΔT
/ΔT
PD
RPD
3
1
F
BF
EF
R
A
A
A
HCNR200
HCNR201
HCNR201
HCNR200
HCNR201
HCNR201
HCNR200
HCNR201
Device
Min.
0.85
0.95
0.93
0.25
0.36
1.3
1.2
2.5
30
0.016
1.00
1.00
1.00
0.01
0.01
0.01
0.50
0.48
Typ.
-0.3
150
-1.7
-65
0.5
1.6
1.6
22
80
9
Max.
1.15
1.05
1.07
0.25
0.05
0.07
0.75
0.72
1.85
1.95
25
ppm/°C
mV/°C
Units
%/°C
nA
pF
pF
%
%
%
V
V
V
0 V < V
5 nA < I
0 V < V
5 nA < I
0 V < V
-40°C < T
5 nA < I
0 V < V
-40°C < T
5 nA < I
0 V < V
5 nA < I
5 nA < I
0 V < V
-40°C < T
5 nA < I
0 V < V
5 nA < I
0 V < V
I
0 V < V
-40°C < T
I
0 V < V
I
0 V < V
I
V
I
I
-40°C < T
I
I
f = 1 MHz,
V
F
F
F
R
F
F
F
F
F
PD
= 10 mA,
= 10 mA
= 0 mA,
= 100 μA
= 10 mA
= 10 mA,
= 100 μA
= 10 mA
= 0 V
Test Conditions
= 0 V
PD
PD
PD
PD1
PD
PD
PD
PD
PD
PD1
PD
PD
PD
PD
PD
PD
PD
PD
PD
A
A
< 15 V
A
< 15 V
A
< 15 V
A
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 50 μA,
< 50 μA,
< 50 μA,
< 50 μA,
< 50 μA,
< 50 μA,
< 50 μA,
< 50 μA,
< 85°C,
< 85°C,
< 85°C,
< 85°C,
< 85°C
Fig.
4,5,
2,3
2,3
10
9,
6
7
7
8
Note
1
1
1
2
2
2
3