4N25-000E Avago Technologies US Inc., 4N25-000E Datasheet - Page 5

• Manufacturer Part Number: 4N25-000E
• Description: OPTOCOUPLER W/BASE 6-DIP
• Manufacturer: Avago Technologies US Inc.

Specifications of 4N25-000E

• Output Type: Transistor with Base
• Input Type: DC
• Package / Case: 6-DIP (0.300", 7.62mm)
• Number Of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (min): 20% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 10mA
• Vce Saturation (max): 500mV
• Mounting Type: Through Hole
• Forward Current: 80 mA
• Maximum Input Diode Current: 80 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 500 mV
• Isolation Voltage: 2500 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 6
• Breakdown Voltage: 30V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 516-1556-5

Electrical Specifications (T
* CTR =
Figure 1. Forward current vs. temperature.
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Current
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Isolation Resistance
Floating Capacitance
100
80
60
40
20
0
-55
T
A
-25
– AMBIENT TEMPERATURE – °C
I
I
C
F
x 100%
0
4N25 fig 1
25
50
A
= 25˚C)
75
100
125
Symbol
V
I
C
BV
BV
BV
I
CTR
V
t
t
R
C
I
R
C
r
f
CEO
t
CE(sat)
f
F
iso
Figure 2. Collector power dissipation vs. temperature.
CEO
ECO
CBO
200
150
100
50
0
-55
T
A
-25
– AMBIENT TEMPERATURE – °C
Min.
–
–
–
–
30
7
70
2
20
–
–
–
5 x 10
–
0
10
4N25 fig 2
25
50
Typ.
1.2
–
50
–
–
–
–
–
–
0.1
3
3
1 x 10
1
75
11
100
Max.
1.5
10
–
50
–
–
–
–
–
0.5
–
–
–
–
125
Figure 3. Forward current vs. forward voltage.
500
200
100
50
20
10
5
2
1
Units
V
µA
pF
nA
V
V
V
mA
%
V
µs
µs
Ω
pF
0
T
T
T
A
A
A
V
0.5
= 75°C
= 50°C
= 25°C
F
– FORWARD VOLTAGE – V
1.0
4N25 fig 3
Test Conditions
I
V
V = 0, f = 1 KHz
V
I
I
I
I
V
I
V
R
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
F
C
E
C
F
F
R
CE
CE
CE
L
= 10 mA
= 0.1 mA, I
= 10 µA, I
= 0.1 mA, I
= 10 mA
= 50 mA, I
= 100 Ω
= 4 V
1.5
= 10 V, I
= 10 V
= 10 V, I
2.0
T
T
F
F
C
C
A
A
= 0
F
= 0
F
= 2 mA
= 2 mA
= 0
= 0
= 0°C
= -25°C
2.5
3.0