4N25-500E Avago Technologies US Inc., 4N25-500E Datasheet - Page 4

• Manufacturer Part Number: 4N25-500E
• Description: OPTOCOUPLER PHOTOTRANS 6-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of 4N25-500E

• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (min): 20% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 10mA
• Vce Saturation (max): 500mV
• Output Type: Transistor with Base
• Mounting Type: Surface Mount, Gull Wing
• Package / Case: 6-SMD Gull Wing
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: SMD
• No. Of Pins: 6
• Input Current Max: 10mA
• Isolation Voltage: 2.5kV
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.5 V
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Maximum Input Diode Current: 80 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Details

Solder Reflow Temperature Profile
1. One-time soldering reflow is recommended within
2. When using another soldering method such as infrared
Absolute Maximum Ratings
4
Storage Temperature, T
Operating Temperature, T
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I
Reverse Input Voltage, V
Input Power Dissipation, P
Collector Current, I
Collector-Emitter Voltage, V
Emitter-Collector Voltage, V
Collector-Base Voltage, V
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage, V
(AC for 1 minute, R.H. = 40 ~ 60%)
the condition of temperature and time profile shown
at right.
ray lamp, the temperature may rise partially in the mold
of the device. Keep the temperature on the package
of the device within the condition of (1) above.
C
iso
S
R
CBO
A
I
F
CEO
ECO
–55˚C to +150˚C
–55˚C to +100˚C
260˚C for 10 s
80 mA
6 V
150 mW
100 mA
30 V
7 V
70 V
150 mW
250 mW
2500 Vrms
25°C
Note: Non-halide flux should be used.
150°C
60 ~ 150 sec
200°C
217°C
Time (sec)
250°C
90 sec
60 sec
260°C (Peak Temperature)
30 seconds
60 sec