4N25-W00E Avago Technologies US Inc., 4N25-W00E Datasheet - Page 4

OPTOCOUPLER GP PHOTOTRANS 6-DIP

4N25-W00E

Manufacturer Part Number
4N25-W00E
Description
OPTOCOUPLER GP PHOTOTRANS 6-DIP
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of 4N25-W00E

Output Type
Transistor with Base
Input Type
DC
Package / Case
6-DIP (0.400", 10.16mm)
Number Of Channels
1
Voltage - Isolation
2500Vrms
Current Transfer Ratio (min)
20% @ 10mA
Voltage - Output
30V
Current - Output / Channel
100mA
Current - Dc Forward (if)
10mA
Vce Saturation (max)
500mV
Mounting Type
Through Hole
Forward Current
80 mA
Maximum Input Diode Current
80 mA
Maximum Reverse Diode Voltage
6 V
Output Device
Transistor With Base
Configuration
1
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
500 mV
Isolation Voltage
2500 Vrms
Maximum Forward Diode Voltage
1.5 V
Maximum Collector Current
100 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Transfer Ratio (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
4N25-W00E
516-1833-5
Solder Reflow Temperature Profile
1. One-time soldering reflow is recommended within
2. When using another soldering method such as infrared
Absolute Maximum Ratings
4
Storage Temperature, T
Operating Temperature, T
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I
Reverse Input Voltage, V
Input Power Dissipation, P
Collector Current, I
Collector-Emitter Voltage, V
Emitter-Collector Voltage, V
Collector-Base Voltage, V
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage, V
(AC for 1 minute, R.H. = 40 ~ 60%)
the condition of temperature and time profile shown
at right.
ray lamp, the temperature may rise partially in the mold
of the device. Keep the temperature on the package
of the device within the condition of (1) above.
C
iso
S
R
CBO
A
I
F
CEO
ECO
–55˚C to +150˚C
–55˚C to +100˚C
260˚C for 10 s
80 mA
6 V
150 mW
100 mA
30 V
7 V
70 V
150 mW
250 mW
2500 Vrms
25°C
Note: Non-halide flux should be used.
150°C
60 ~ 150 sec
200°C
217°C
Time (sec)
250°C
90 sec
60 sec
260°C (Peak Temperature)
30 seconds
60 sec

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