THNCF512MDGI Toshiba, THNCF512MDGI Datasheet - Page 34

• Manufacturer Part Number: THNCF512MDGI
• Description: MEMORY CARD COMPACT FLASH 512MB
• Manufacturer: Toshiba

Specifications of THNCF512MDGI

• Memory Size: 512MB
• Memory Type: CompactFLASH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC CHARACTERISTICS
Input Characteristics
Output Drive Characteristics
I
I
−I
−I
I
I
SYMBOL
Type
Type
LI
LO
CCS
CCO
PU
PD
1
2
3
4
1
V
V
SYMBOL
SYMBOL
OH
OL
Input leakage current
Output leakage current
Pull-up current (Resistivity)
Pull-down current (Resistivity)
Power down mode current
Operating current @ 3.3V
Operating current @ 5V
V
∆Vt
V
∆Vt
V
V
V
V
Write operation
Read operation
Write operation
Read operation
V
V
T+
T+
IH
IH
IL
IL
T-
T-
PARAMETER
Input High Voltage
CMOS
Input Low Voltage
CMOS
Input High Voltage
Input Low Voltage CMOS
Input Low to High threshold
Schmitt trigger
Input High to Low threshold
Schmitt trigger
Hysteresis voltage
Input Low to High threshold
Schmitt trigger
Input High to Low threshold
Schmitt trigger
Hysteresis voltage
Output High Voltage
Output Low Voltage
PARAMETER
(V
CC
PARAMETER
= 3.3 V ± 5%, 5 V ± 0.5V
MIN










TENTATIVE
V
CC
MAX
MIN
1.5
2.0







1
1
− 0.8
MIN
2.0
2.0
2.0
2.0
0.9
0.9
0.5
0.8
1.0
0.8
0.5
0.8




Gnd + 0.4
−43 (75)
,
43 (75)
TYP.
MAX
Ta = -40°C
1.0
1.2
25
21
28
23



MAX
1.0
1.0
1.0
0.8
2.5
2.5
2.3
2.0




µA (kΩ)
µA (kΩ)
TYP
UNIT
THNCFxxxxDGI Series
mA
mA
mA


µA
µA
TYP
~
2.1
2.1
1.2
1.2
2.1
1.8
1.2
1.1




85°C)
UNIT
UNIT
V
V
V
V
V
V
V
OUT
FORCE
FORCE
CC
CC
CC
CC
V
V
TEST CONDITIONS
2004-5-18 34/47
= 3.3V
= 5V
= 3.3V operation
= 5V operation
= high impedance
= 3.3V
= 0V
CONDITION
V
V
V
V
V
V
V
V
V
V
CONDITION
I
V
V
V
V
V
V
V
V
V
V
OH

I
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
OL
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
= −4mA
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 3.3 V
= 4mA
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V