MT4VDDT3232UY-6K1 Micron Technology Inc, MT4VDDT3232UY-6K1 Datasheet - Page 26

• Manufacturer Part Number: MT4VDDT3232UY-6K1
• Description: MODULE DDR 128MB 167MHZ 172-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT3232UY-6K1

• Memory Type: DDR SDRAM
• Memory Size: 128MB
• Speed: 333MT/s
• Package / Case: 172-UDIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 100UDIMM
• Device Core Size: 32b
• Organization: 32Mx32
• Total Density: 128MByte
• Chip Density: 256Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 700mA
• Number Of Elements: 4
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 100
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 20: Serial Presence-Detect Matrix (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 26
NOTE:
pdf: 09005aef808da768, source: 09005aef808d2e9a
DD4C16_32x32UG.fm - Rev. D 9/04 EN
3. The value of
99-127 Manufacturer-specific Data (RSVD)
1. The value of
2. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is
48–61 Reserved
BYTE
36-40 Reserved
65-71 Manufacturer’s JEDEC ID Code
73-90 Module Part Number (ASCII)
95-98 Module Serial Number
SDRAM device specification is 15ns.
33
34
35
41
42
43
44
45
46
47
62
63
64
72
91
92
93
94
represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster min-
imim slew rate is met.
Address and Command Hold Time,
note 2)
Data/Data Mask Input Setup Time,
Data/Data Mask Input Hold Time,
Min Active Auto Refresh Time,
Minimum Auto Refresh to Active/Auto Refresh
Command Period,
SDRAM Device Max Cycle Time,
SDRAM Device Max DQS-DQ Skew Time,
SDRAM Device Max Read Data Hold Skew
Factor,
Reserved
DIMM Height
SPD Revision
Checksum for Bytes 0-62
Manufacturer’s JEDEC ID Code
Manufacturing Location
Pcb Identification Code
Identification Code (Continued)
Year of Manufacture in BCD
Week of Manufacture in BCD
t
t
t
RP,
QHS
RAS used for -75 modules is calculated from
t
RCD and
DESCRIPTION
t
RFC
t
RAP for -335 modules indicated as 18ns to align with industry specifications; actual DDR
t
RC (see note 3)
t
CK
t
DH
t
t
MAX
DS
IH (See
t
DQSQ
ENTRY (VERSION)
26
0.75ns (-75Z/-75)
1.0ns (-75Z/-75)
0.5ns (-75Z/-75)
0.5ns (-75Z/-75)
0.5ns (-75Z/-75)
65ns (-75Z/-75)
75ns (-75Z/-75)
13ns (-75Z/-75)
t
RC -
(Continued)
Release 1.0
0.45ns (-6)
0.45ns (-6)
0.45ns (-6)
0.55ns (-6)
0.8ns (-6)
60ns (-6)
72ns (-6)
12ns (-6)
MICRON
01–12
-75Z
t
-75
1-9
RP. Actual device spec. value is 40 ns.
-6
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MB, 128MB (x32, SR)
MT4VDDT1632U
Variable Data
Variable Data
Variable Data
Variable Data
100-PIN DDR UDIMM
01–0C
01-09
A0
2D
D4
80
45
50
45
50
00
3C
41
48
4B
30
34
3C
55
75
00
01
00
10
94
C4
2C
00
FF
–
©2004 Micron Technology, Inc. All rights reserved.
MT4VDDT3232U
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
01-09
A0
2D
A7
D7
80
45
50
45
50
00
3C
41
48
4B
30
34
3C
55
75
00
01
00
10
E7
2C
00
FF
–