MT18LSDT6472G-133D2 Micron Technology Inc, MT18LSDT6472G-133D2 Datasheet - Page 12
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MT18LSDT6472G-133D2
Manufacturer Part Number
MT18LSDT6472G-133D2
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc
Specifications of MT18LSDT6472G-133D2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
2.43A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 12: I
SDRAM components only
Notes: 1, 6, 11, 13; notes appear on page 15; 0°C £ T
Table 13: I
SDRAM components only
Notes: 1, 6, 11, 13; notes appear on page 15; 0°C £ T
16,32,Meg x 64 DDR SDRAM DIMMs (Footer Desc variable)
SD18C16_32_64x72G_B.fm - Rev. B 1/03 EN
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT CS# = HIGH;
CKE = HIGH
SELF REFRESH CURRENT: CKE £ 0.2V
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT CS# = HIGH;
CKE = HIGH
SELF REFRESH CURRENT: CKE £ 0.2V
RC =
RC =
t
t
RC (MIN)
RC (MIN)
DD
DD
PARAMETER/CONDITION
PARAMETER/CONDITION
Specifications and Conditions (256MB)
Specifications and Conditions (512MB)
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
t
t
t
t
RFC =
RFC = 15.6 µs
RFC =
RFC = 15.6 µs
A
A
£ +70°C; V
£ +70°C; V
t
t
RFC (MIN)
RFC (MIN)
168-PIN REGISTERED SDRAM DIMM
12
128MB, 256MB, 512MB (x72, ECC)
DD
DD
= V
= V
SYMBOL
SYMBOL
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD 1
DD 2
DD 3
DD 4
DD 5
DD 6
DD 7
DD 1
DD 2
DD 3
DD 4
DD 5
DD 6
DD 7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q - +3.3V ±0.3V
Q - +3.3V ±0.3V
2,880
2,970
5,940
2,430
2,430
5,130
-13E
-13E
900
720
36
54
36
36
63
45
MAX
2,250
2,430
4,860
MAX
2,700
2,700
5,580
-133
-133
900
720
36
54
36
36
63
45
2,250
2,430
4,860
2,520
2,520
4,860
-10E
-10E
720
720
36
63
45
36
54
36
UNITS
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
©2003, Micron Technology Inc.
19, 30, 31
19, 30, 31
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
NOTES
NOTES
30
30
30
30
30
30
30
30
4
4