MT18LSDT6472G-133D2 Micron Technology Inc, MT18LSDT6472G-133D2 Datasheet - Page 17

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MT18LSDT6472G-133D2

Manufacturer Part Number
MT18LSDT6472G-133D2
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc

Specifications of MT18LSDT6472G-133D2

Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
2.43A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 17: EEPROM Device Select Code
Most significant bit (b7) is sent first)
Table 18: EEPROM Operating Modes
16,32,Meg x 64 DDR SDRAM DIMMs (Footer Desc variable)
SD18C16_32_64x72G_B.fm - Rev. B 1/03 EN
SDA OUT
SELECT CODE
Memory Area Select Code (Two Arrays)
Protection Register Select Code
Current Address Read
Random Ddress Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
MODE
t SU:STA
RW BIT
1
0
1
1
0
0
Figure 9: SPD EEPROM Timing Diagram
t F
t HD:STA
V
V
V
V
t LOW
t AA
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
b7
1
0
t HIGH
BYTES
t HD:DAT
£ 16
DEVICE TYPE IDENTIFIER
³ 1
1
1
1
168-PIN REGISTERED SDRAM DIMM
b6
17
0
1
128MB, 256MB, 512MB (x72, ECC)
INITIAL SEQUENCE
Start, Device Select, RW = 1
Start, Device Select, RW = 0, Address
Restart, Device Select, RW = 1
Similar to Current or Random Address Read
Start, Device Select, RW = 0
Start, Device Select, RW = 0
t DH
b5
1
1
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t SU:DAT
b4
0
0
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
SA0
SA0
b1
t BUF
©2003, Micron Technology Inc.
UNDEFINED
RW
RW
RW
b0

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