MT8VDDT6464HG-335D1 Micron Technology Inc, MT8VDDT6464HG-335D1 Datasheet - Page 26
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MT8VDDT6464HG-335D1
Manufacturer Part Number
MT8VDDT6464HG-335D1
Description
MODULE DDR SDRAM 512MB 200SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT8VDDT6464HG-335D1
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
167MHz
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.4A
Number Of Elements
8
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
557-1127
Table 21: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear following matrix
pdf: 09005aef8092973f, source: 09005aef80921669
DD8C16_32_64x64HG.fm - Rev. B 9/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on
Assembly
Number of Column Addresses on
Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
= 2.5 (see note 1)
SDRAM Access From Clock,
Latency = 2.5
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary DDR
SDRAM)
Error-checking DDR SDRAM Data
Width
Minimum Clock Delay, Back-to-Back
Random Column Access
Burst Lengths Supported
Number of Banks on DDR SDRAM
Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
= 2
SDRAM Access from Clock,
Latency = 2
SDRAM Cycle Time,
= 1.5
SDRAM Access from CK ,
Latency = 1.5
Minimum Row Precharge Time,
(see note 4)
Minimum Row Active to Row Active,
t
Minimum RAS# to CAS# Delay,
(see note 4)
RRD
DESCRIPTION
t
t
t
CK, CAS Latency
CK, CAS Latency
CK, CAS Latency
t
AC, CAS
t
t
AC, CAS
AC, CAS
t
RCD
t
RP
Unbuffered/Diff. Clock
0.75ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
7.5ns (-335/-262/-26A)
15ns (-262/-26A/-265)
ENTRY (VERSION)
Fast/Concurrent AP
15.62µs, 7.8µs/SELF
20ns (-26A/-265)
20ns (-26A/-265)
7ns (-262/-26A)
DDR SDRAM
7.5ns (-265)
0.7ns (-335)
0.7ns (-335)
10ns (-265)
18ns (-335)
15ns (-262)
12ns (-335)
18ns (-335)
15ns (-262)
SSTL 2.5V
6ns(-335)
1 clock
12, 13
10, 11
2, 4, 8
2, 2.5
None
None
128
256
N/A
N/A
64
1
0
8
4
0
1
26
128MB, 256MB, 512MB (x64, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT8VDDT1664H MT8VDDT3264H MT8VDDT6464H
0C
0A
0C
A0
3C
3C
3C
80
08
07
01
40
00
04
60
70
75
70
75
00
80
08
00
01
0E
04
01
02
20
C0
75
70
75
00
00
48
50
30
48
50
200-PIN DDR SODIMM
©2004 Micron Technology, Inc. All rights reserved.
0D
0A
A0
0C
C0
3C
3C
3C
80
08
07
01
40
00
04
60
70
75
70
75
00
82
08
00
01
0E
04
01
02
20
75
70
75
00
00
48
50
30
48
50
0D
A0
80
08
0B
01
40
00
04
60
70
75
70
75
00
82
08
00
01
0E
04
0C
01
02
C0
75
70
75
00
00
48
3C
50
30
3C
48
3C
50
07
20