MT8VDDT6464HG-40BF2 Micron Technology Inc, MT8VDDT6464HG-40BF2 Datasheet - Page 12

• Manufacturer Part Number: MT8VDDT6464HG-40BF2
• Description: MODULE DDR SDRAM 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464HG-40BF2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 11:
PDF: 09005aef8092973f / Source: 09005aef80921669
DD8C32_64x64H.fm - Rev. D 9/08 EN
Parameter/Condition
Operating one bank active-precharge current:
t
cycle; Address and control inputs changing once every two clock
cycles
Operating one bank active-read-precharge current: BL = 4;
t
inputs changing once per clock cycle
Precharge power-down standby current: All device banks
idle; Power-down mode;
Idle standby current: CS# = HIGH; All device banks idle;
t
changing once per clock cycle; V
Active power-down standby current: One device bank active;
Power-down mode;
Active standby current: CS# = HIGH; CKE = HIGH; One device
bank active;
inputs changing twice per clock cycle; Address and other control
inputs changing once per clock cycle
Operating burst read current: BL = 2; Continuous burst reads;
One device bank active; Address and control inputs changing
once per clock cycle;
Operating burst write current: BL = 2; Continuous burst writes;
One device bank active; Address and control inputs changing
once per clock cycle;
changing twice per clock cycle
Auto refresh current
Self refresh current: CKE ≤ 0.2V
Operating bank active interleave read current: Four device
bank interleaving reads (BL = 4) with auto precharge;
t
change only during active READ or WRITE commands
CK =
RC =
CK =
RC =
t
t
t
t
RC (MIN);
RC (MIN);
CK (MIN); DQ, DM, and DQS inputs changing once per clock
CK (MIN); CKE = HIGH; Address and other control inputs
t
RC =
I
Values are shown for the MT46V64M8 DDR SDRAM only and are computed from values specified in the
512Mb (64 Meg x 8) component data sheet
DD
t
t
CK =
CK =
t
Specifications and Conditions – 512MB
RAS (MAX);
t
CK =
t
t
CK =
CK =
t
t
CK (MIN); I
CK (MIN); Address and control inputs
t
CK =
t
t
t
CK (MIN); CKE = LOW
CK (MIN); I
CK (MIN); DQ, DM, and DQS inputs
t
t
IN
CK (MIN); CKE = LOW
CK =
OUT
= V
REF
t
CK (MIN); DQ, DM, and DQS
= 0mA; Address and control
OUT
for DQ, DM, and DQS
= 0mA
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
t
t
RFC =
RFC = 7.8125µs
t
RC =
t
RFC (MIN)
t
RC (MIN);
12
Symbol
I
I
I
I
I
I
I
DD
DD
DD
I
I
DD
I
I
I
DD
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
DD
DD
DD
4W
3N
5A
4R
2P
2F
3P
0
1
5
6
7
1,240
1,480
1,520
1,560
2,760
3,600
-40B
440
360
480
40
88
40
Electrical Specifications
1,040
1,280
1,320
1,400
2,320
3,240
-335
360
280
400
40
80
40
©2004 Micron Technology, Inc. All rights reserved.
1,160
1,160
1,080
2,240
2,800
-265
920
320
240
360
40
80
40
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA