MT8VDDT6464HG-40BF2 Micron Technology Inc, MT8VDDT6464HG-40BF2 Datasheet - Page 8

• Manufacturer Part Number: MT8VDDT6464HG-40BF2
• Description: MODULE DDR SDRAM 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464HG-40BF2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Specifications
Table 7:
PDF: 09005aef8092973f / Source: 09005aef80921669
DD8C32_64x64H.fm - Rev. D 9/08 EN
V
V
Symbol
DD
IN
, V
I
/V
T
OZ
I
A
I
DD
OUT
Q
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
disabled
DRAM ambient operating temperature
REF
DD
/V
Notes:
input 0V ≤ V
DD
Q supply voltage relative to V
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. For further information, refer to technical note
on Micron’s Web site.
IN
≤ 1.35V (All other pins not under
OUT
SS
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
≤ V
SS
DD
1
IN
Q; DQ are
≤ V
DD
8
;
Address inputs,
RAS#, CAS#, WE#, BA,
S#, CKE
CK, CK#
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal Applications,”
Electrical Specifications
Min
–1.0
–0.5
©2004 Micron Technology, Inc. All rights reserved.
–16
–40
–8
–2
–5
0
Max
+3.6
+3.2
+16
+70
+85
+8
+2
+5
available
Units
µA
µA
°C
°C
V
V