MT16HTF12864HY-40EB3 Micron Technology Inc, MT16HTF12864HY-40EB3 Datasheet - Page 7
![MODULE SDRAM DDR2 1GB 200SODIMM](/photos/7/83/78349/mfg_mt_sodimm_series_sml.jpg)
MT16HTF12864HY-40EB3
Manufacturer Part Number
MT16HTF12864HY-40EB3
Description
MODULE SDRAM DDR2 1GB 200SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT16HTF12864HY-40EB3
Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
128Mx64
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
60ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
976mA
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Specifications
Table 7:
Capacitance
AC Timing and Operating Conditions
Table 8:
PDF: 09005aef818e4054/Source: 09005aef818e40d2
HTF16C128_256x64H.fm - Rev. B 11/06 EN
V
Symbol
IN
V
V
T
V
I
DD
, V
V
DD
I
CASE
DD
OZ
I
REF
I
OUT
Q
L
Absolute Maximum Ratings
Module and Component Speed Grade Table
Parameter
V
V
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
DDR2 SDRAM device operating temperature (case)
REF
REF
DD
DD
DD
Q supply voltage relative to V
L supply voltage relative to Vss
Module Speed Grade
supply voltage relative to V
Notes:
input 0V ≤ V
leakage current; V
Stresses greater than those listed in Table 7 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. For further information, refer to technical note TN-00-08: Thermal Applications, available
2. Refresh rate must double when T
At DDR2 data rates, Micron encourages designers to simulate the performance of the
module to achieve optimum values. When inductance and delay parameters associated
with trace lengths are used in simulations, they are significantly more accurate and real-
istic than a gross estimation of module capacitance. Simulations can then render a
considerably more accurate result. JEDEC modules are now designed using simulations
to close timing budgets.
Recommended AC operating conditions are given in the DDR2 component data sheets,
available on Micron’s Web site. Module speed grades correlate with component speed
grades as shown in Table 8:
-80E
-800
-667
-53E
-40E
on Micron’s Web site at www.micron.com/technotes.
IN
≤0.95V; (All other pins not under
REF
= valid V
OUT
SS
SS
SS
≤ V
REF
1GB, 2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
DD
level
IN
Q; DQs and
≤ V
DD
7
;
CASE
1
exceeds 85°C.
Command/Address,
RAS#, CAS#, WE#
CK, CK#, S#, CKE, ODT
DM
DQ, DQS, DQS#
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2
Component Speed Grade
Electrical Specifications
-25E
-37E
-53E
-25
-3
Min
–1.0
–0.5
–0.5
–0.5
©2004 Micron Technology, Inc. All rights reserved.
–80
–40
–10
–10
–32
–40
0
Max
+2.3
+2.3
+2.3
+2.3
+80
+40
+10
+10
+32
+85
+95
Units
µA
µA
µA
°C
°C
V
V
V
V