MT16LSDT6464AG-133D2 Micron Technology Inc, MT16LSDT6464AG-133D2 Datasheet - Page 15
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MT16LSDT6464AG-133D2
Manufacturer Part Number
MT16LSDT6464AG-133D2
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc
Specifications of MT16LSDT6464AG-133D2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.096A
Number Of Elements
16
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 13:
Table 14:
a - Value calculated as one module bank in this condition, and all other module banks in power-down mode (I
b - Value calculated reflects all module banks in this condition.
PDF: 09005aef807b3771/Source: 09005aef807b37b5
SD8_16C32_64x64AG.fm - Rev. D 3/05 EN
Parameter/Condition
Parameter/Condition
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
STANDBY CURRENT: Active Mode;CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
RC =
RC =
t
t
RC (MIN)
RC (MIN)
I
Notes: 1, 5, 6, 11, 13; notes appear on page 19; V
I
Notes: 1, 6, 11, 13; notes appear on page 19; V
DD
DD
Specifications and Conditions – 256MB
Specifications and Conditions – 512MB
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM
t
t
t
t
RFC =
RFC = 7.8125µs
RFC =
RFC = 7.8125µs
t
t
RFC (MIN)
RFC (MIN)
15
DD
DD
, V
, V
DDQ
Symbol
Symbol
DDQ
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
= +3.3V ±0.3V; SDRAM component values only
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
2
3
4
5
6
7
1
2
3
4
5
6
7
= +3.3v ±0.3v; SDRAM component values only
b
b
b
b
a
a
a
1,080
1,080
2,280
1,096
1,096
4,560
-13E
-13E
320
336
16
28
20
32
56
40
MAX
1,080
1,080
2,160
MAX
1,016
1,096
4,320
-133
-133
320
336
16
28
20
32
56
40
Electrical Specifications
©2003 Micron Technology, Inc. All rights reserved.
1,080
1,080
2,160
1,016
1,096
4,320
-10E
-10E
320
336
16
28
20
32
56
40
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
DD
2).
3, 18,19,
3, 18,19,
18, 19,
18, 19,
Notes
Notes
19, 22
19, 22
22, 30
19, 22
19, 22
22, 30
3, 12,
3, 18,
3, 12,
3, 18,
3, 12
3, 12
22
22
22
22
4
4