MT16LSDT6464AG-133D2 Micron Technology Inc, MT16LSDT6464AG-133D2 Datasheet - Page 20

• Manufacturer Part Number: MT16LSDT6464AG-133D2
• Description: MODULE SDRAM 512MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDT6464AG-133D2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.096A
• Number Of Elements: 16
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 18: EEPROM Device Select Code
Most significant bit (b7) is sent first
Table 19: EEPROM Operating Modes
09005aef80bccbe7
SD8_16C16_32x64AG.fm - Rev. E 12/05 EN
SDA OUT
SELECT CODE
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
MODE
t SU:STA
RW BIT
Figure 10: SPD EEPROM Timing Diagram
1
0
1
1
0
0
t F
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
t HD:DAT
BYTES
b7
DEVICE TYPE IDENTIFIER
1
0
≤ 16
20
≥ 1
1
1
1
1
128MB (x64, SR), 256MB (x64, DR)
t DH
b6
0
1
INITIAL SEQUENCE
START, Device Select, RW = “1”
START, Device Select, RW = “0”, Address
reSTART, Device Select, RW = “1”
Similar to Current or Random Address Read
START, Device Select, RW = “0”
START, Device Select, RW = “0”
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t SU:DAT
b5
1
1
168-PIN SDRAM UDIMM
b4
0
0
SA2
SA2
©2003, 2004 Micron Technology, Inc. All rights reserved.
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0