MT18VDDT6472AG-335G4 Micron Technology Inc, MT18VDDT6472AG-335G4 Datasheet

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MT18VDDT6472AG-335G4

Manufacturer Part Number
MT18VDDT6472AG-335G4
Description
MODULE SDRAM DDR 512MB 184DIMM
Manufacturer
Micron Technology Inc

Specifications of MT18VDDT6472AG-335G4

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
256Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.611A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DDR SDRAM UDIMM
MT18VDDT6472A – 512MB
MT18VDDT12872A – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• Vdd = VddQ = +2.5V
• Vddspd = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Dual rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
Table 1:
PDF: 09005aef80814e61/Source: 09005aef807f8acb
DD18C64_128x72A.fm - Rev. D 9/08 EN
(UDIMM)
(-40B: Vdd = VddQ = +2.6V)
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
Speed
Grade
-40B
-26A
-335
-262
-265
Key Timing Parameters
Nomenclature
Products and specifications discussed herein are subject to change by Micron without notice.
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
Notes:
1. The values of
actual DDR SDRAM device specifications are 15ns.
CL = 3
400
Data Rate (MT/s)
1
512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM
t
RCD and
CL = 2.5
333
333
266
266
266
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
1
CL = 2
266
266
266
266
200
Figure 1:
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 31.75mm (1.25in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3.0
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1. Not recommended for new designs.
2. Contact Micron for industrial temperature
module offerings.
t
(ns)
RCD
15
18
15
20
20
184-Pin UDIMM (MO-206 R/C B)
(ns)
t
A
A
15
18
15
20
20
RP
2
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
(ns)
t
55
60
60
65
65
RC
1
1
1
Marking
Features
None
-40B
-26A
-335
-262
-265
Notes
G
Y
I
1

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MT18VDDT6472AG-335G4 Summary of contents

Page 1

... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 184-Pin UDIMM (MO-206 R/C B) Marking 2 ≤ +70°C) A ≤ +85° module offerings ...

Page 2

... Part Number Density MT18VDDT6472AG-40B__ 512MB MT18VDDT6472AY-40B__ 512MB MT18VDDT6472AG-335__ 512MB MT18VDDT6472AY-335__ 512MB MT18VDDT6472AG-262__ 512MB MT18VDDT6472AG-26A__ 512MB MT18VDDT6472AY-26A__ 512MB MT18VDDT6472AG-265__ 512MB MT18VDDT6472AY-265__ 512MB Table 4: Part Numbers and Timing Parameters – 1GB Modules Base device: MT46V64M8, Module 2 Part Number Density MT18VDDT12872AG-40B__ 1GB MT18VDDT12872AY-40B__ 1GB MT18VDDT12872AG-335__ ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 Vref 24 DQ17 47 2 DQ0 25 DQS2 48 3 Vss 26 Vss 49 4 DQ1 ...

Page 4

Table 6: Pin Descriptions Symbol Type A0–A12 Input BA0, BA1 Input CK0, CK0#, Input CK1, CK1#, CK2, CK2# CKE0, CKE1 Input DM0–DM8 Input RAS#, CAS#, WE# Input S0#, S1# Input SA0–SA2 Input SCL Input CB0–CB7 DQ0–DQ63 DQS0–DQS8 SDA Vdd/VddQ Supply ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0 DM0 DM CS# DQS DQ DQ0 DQ1 DQ DQ2 DQ DQ DQ3 DQ4 DQ DQ DQ5 DQ6 DQ DQ7 DQ DQS1 DM1 DM CS# DQS DQ8 DQ DQ DQ9 ...

Page 6

... READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 7

Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...

Page 8

... PDF: 09005aef80814e61/Source: 09005aef807f8acb DD18C64_128x72A.fm - Rev. D 9/08 EN 512MB, 1GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM ® memory modules are designed to optimize signal integrity through carefully Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 Electrical Specifications Component Speed Grade ...

Page 9

Idd Specifications Table 9: Idd Specifications and Conditions – 512MB (Die Revision K) Values shown for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 10

Table 10: Idd Specifications and Conditions – 512MB (All Other Die Revisions) Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one bank ...

Page 11

Table 11: Idd Specifications and Conditions – 1GB Values are for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current ...

Page 12

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: Iout = 3mA Input leakage current GND to ...

Page 13

Module Dimensions Figure 3: 184-Pin DDR UDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) TYP 1.0 (0.039) TYP U19 U10 U11 Pin 184 49.53 (1.95) TYP Notes: ...

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