MT36VDDF12872G-335G3 Micron Technology Inc, MT36VDDF12872G-335G3 Datasheet - Page 20
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MT36VDDF12872G-335G3
Manufacturer Part Number
MT36VDDF12872G-335G3
Description
MODULE SDRAM DDR 1GB 184DIMM
Manufacturer
Micron Technology Inc
Specifications of MT36VDDF12872G-335G3
Memory Type
DDR SDRAM
Memory Size
1GB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184RDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
256Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
3.222A
Number Of Elements
36
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 18: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 14; notes appear following parameter tables; 0°C
pdf: 09005aef80772fd2, source: 09005aef8075ebf6
DDF36C128_256x72G.fm - Rev. D 9/04 EN
AC CHARACTERISTICS
PARAMETER
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-26A, -265, and -202 Speed Grades) (Continued)
DD
20
SYMBOL
t
t
WPRES
t
t
t
t
t
t
t
t
t
T
t
WPRE
WPST
t
t
t
t
t
XSNR
XSRD
t
t
MRD
MRD
t
RPRE
t
REFC
t
RPST
WTR
QHS
t
IPW
RAS
RAP
t
RCD
RRD
REFI
VTD
A
t
t
RFC
t
NA
WR
QH
IH
RC
IS
IS
RP
F
S
S
+70°C; V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
MIN
t
0.90
0.25
QHS
200
HP -
0.9
0.4
0.4
2.2
t
12
15
40
20
65
75
20
20
15
15
75
QH -
1
1
0
1
0
-26A/-265
DD
= V
1GB, 2GB (x72, ECC, DR)
t
120,000
DQSQ
MAX
0.75
70.3
DD
1.1
0.6
0.6
7.8
Q = +2.5V ±0.2V
184-PIN DDR RDIMM
t
t
MIN
0.25
QHS
200
HP -
1.1
1.1
1.1
0.9
0.4
0.4
2.2
15
16
40
20
70
80
20
20
15
15
t
80
QH -
0
1
0
-202
©2004 Micron Technology, Inc. All rights reserved.
120,000
t
DQSQ
MAX
70.3
1.1
0.6
0.6
7.8
1
UNITS NOTES
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
CK
CK
CK
CK
CK
CK
22, 23
31, 49
18, 19
12
12
12
45
38
38
17
22
21
21