MT36VDDF12872G-335G3 Micron Technology Inc, MT36VDDF12872G-335G3 Datasheet - Page 22

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MT36VDDF12872G-335G3

Manufacturer Part Number
MT36VDDF12872G-335G3
Description
MODULE SDRAM DDR 1GB 184DIMM
Manufacturer
Micron Technology Inc

Specifications of MT36VDDF12872G-335G3

Memory Type
DDR SDRAM
Memory Size
1GB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184RDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
256Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
3.222A
Number Of Elements
36
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
pdf: 09005aef80772fd2, source: 09005aef8075ebf6
DDF36C128_256x72G.fm - Rev. D 9/04 EN
22. The valid data window is derived by achieving
23. Each byte lane has a corresponding DQS.
24. This limit is actually a nominal value and does not
25. To maintain a valid level, the transitioning edge of
REFRESH command must be asserted at least
once every 70.3µs; burst refreshing or posting by
the DRAM controller greater than eight refresh
cycles is not allowed.
other specifications:
(
directly porportional with the clock duty cycle
and a practical data valid window can be derived.
The clock is allowed a maximum duty cycle varia-
tion of 45/55, beyond which functionality is
uncertain. Figure 10, Derating Data Valid Window,
shows derating curves for duty cycles ranging
between 50/50 and 45/55.
result in a fail value. CKE is HIGH during
REFRESH command period (
CKE is LOW (i.e., during standby).
the input must:
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
t
QH =
t
50/50
HP -
3.750
2.500
3.400
t
NA
QHS). The data valid window derates
49.5/50.5
3.700
-335
-262/-26A/-265 @
-202 @
-262/-26A/-265 @
3.350
2.463
t
HP (
t
CK = 10ns
Figure 10: Derating Data Valid Window
t
3.650
49/51
CK/2),
2.425
3.300
t
t
CK = 10ns
CK = 7.5ns
t
RFC [MIN]) else
t
DQSQ, and
48.5/52.5
3.600
2.388
3.250
48/52
3.550
t
QH
2.350
3.200
Clock Duty Cycle
22
47.5/53.5
3.500
26. JEDEC specifies CK and CK# input slew rate must
27. DQ and DM input slew rates must not deviate
28. V
29. The clock is allowed up to ±150ps of jitter. Each
2.313
3.150
be 1V/ns (2V/ns differentially).
from DQS by more than 10 percent. If the DQ/
DM/DQS slew rate is less than 0.5V/ns, timing
must be derated: 50ps must be added to
t
slew rate exceeds 4 V/ns, functionality is uncer-
tain. For -335, slew rates must be 0.5 V/ns.
not active while any bank is active.
timing parameter is allowed to vary by the same
amount.
a. Sustain a constant slew rate from the current
b. Reach at least the target AC level.
c. After the AC target level is reached, continue to
DH for each 100 mV/ns reduction in slew rate. If
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
AC level through to the target AC level, V
or V
maintain at least the target DC level, V
or V
47/53
3.450
must not vary more than 4 percent if CKE is
2.275
3.100
IH
IH
1GB, 2GB (x72, ECC, DR)
(AC).
(DC).
46.5/54.5
3.400
184-PIN DDR RDIMM
2.238
3.050
3.350
46/54
©2004 Micron Technology, Inc. All rights reserved.
2.200
3.000
45.5/55.5
3.300
2.163
2.950
t
3.250
DS and
45/55
IL
IL
2.125
2.900
(DC)
(AC)

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