MT4VDDT864AG-26AB1 Micron Technology Inc, MT4VDDT864AG-26AB1 Datasheet - Page 20

• Manufacturer Part Number: MT4VDDT864AG-26AB1
• Description: MODULE SDRAM DDR 64MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT864AG-26AB1

• Memory Type: DDR SDRAM
• Memory Size: 64MB
• Speed: 266MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

pdf: 09005aef8085081a, source: 09005aef806e129d
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
32. Any positive glitch in the nominal voltage must be
33. Normal Output Drive Curves:
160
140
120
100
80
60
40
20
0
Figure 7: Normal Drive Pull-Down
0.0
less than 1/3 of the clock and not more than
+400mV or 2.9V, whichever is less. Any negative
glitch must be less than 1/3 of the clock cycle and
not exceed either 300mV or 2.2V, whichever is
more positive. However, the DC average cannot be
below 2.3V minimum.
a. The full variation in driver pull-down current
b. The variation in driver pull-down current
c. The full variation in driver pull-up current
d. The variation in driver pull-up current within
e. The full variation in the ratio of the maximum
from minimum to maximum process, temper-
ature and voltage will lie within the outer
bounding lines of the V-I curve of Figure 7,
Normal Drive Pull-Down Characteristics.
within nominal limits of voltage and tempera-
ture is expected, but not guaranteed, to lie
within the inner bounding lines of the V-I
curve of Figure 7, Normal Drive Pull-Down
Characteristics.
from minimum to maximum process, temper-
ature and voltage will lie within the outer
bounding lines of the V-I curve of Figure 8,
Normal Drive Pull-Up Characteristics.
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of Figure
8, Normal Drive Pull-Up Characteristics.
to minimum pull-up and pull-down current
should be between 0.71 and 1.4, for device
drain-to-source voltages from 0.1V to 1.0 Volt,
and at the same voltage and temperature.
0.5
Characteristics
1.0
V
V
OUT
OUT
(V)
(V)
1.5
2.0
Minimum
2.5
20
34. Reduced Output Drive Curves:
64MB, 128MB, 256MB (x64, SR)
-100
-120
-140
-160
-180
-200
-20
-40
-60
-80
0
a)The full variation in driver pull-down current from
b)The variation in driver pull-down current within
c)The full variation in driver pull-up current from
d)The variation in driver pull-up current within
e)The full variation in the ratio of the maximum to
0.0
f. The full variation in the ratio of the nominal
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Figure 8: Normal Drive Pull-Up
184-PIN DDR SDRAM UDIMM
minimum to maximum process, temperature and
voltage will lie within the outer bounding lines of
the V-I curve of Figure 9, Reduced Drive Pull-
Down Characteristics, on page 21.
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of Figure 9,
Reduced Drive Pull-Down Characteristics, on
page 21.
minimum to maximum process, temperature and
voltage will lie within the outer bounding lines of
the V-I curve of Figure 10, Reduced Drive Pull-Up
Characteristics, on page 21.
nominal limits of voltage and temperature is
expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve of
Figure 10, Reduced Drive Pull-Up Characteristics,
on page 21.
minimum pull-up and pull-down current
should be between 0.71 and 1.4, for device
drain-to-source voltages from 0.1V to 1.0V, and
at the same voltage.
pull-up to pull-down current should be unity
±10 percent, for device drain-to-source volt-
ages from 0.1V to 1.0V.
0.5
Characteristics
1.0
V
DD
Q - V
OUT
(V)
1.5
©2004 Micron Technology, Inc.
2.0
2.5