MT9HTF3272Y-53EB2 Micron Technology Inc, MT9HTF3272Y-53EB2 Datasheet - Page 15

• Manufacturer Part Number: MT9HTF3272Y-53EB2
• Description: MODULE DDR2 256MB 240DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF3272Y-53EB2

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 32Mx72
• Total Density: 256MByte
• Chip Density: 256Mb
• Access Time (max): 500ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.44A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 244
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18:
PDF: 09005aef817ab1fc/Source: 09005aef817ab1dd
HTF9C32_64_128x72K.fm - Rev. C 9/06 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
0
1
2
3
4
5
6
7
8
9
Number of SPD bytes used by
Micron
Total number of bytes in SPD
device
Fundamental memory type
Number of row addresses on
assembly
Number of column addresses on
assembly
DIMM height and module ranks
Module data width
Module data width (continued)
Module voltage interface levels
SDRAM cycle time,
maximum value, see byte 18)
SDRAM access from Clock,
(CL = maximum value, see
byte 18)
Module configuration type
Refresh rate/type
SDRAM device width (primary
SDRAM)
Error-checking SDRAM data
width
Minimum clock delay, back-to-
back random column access
Burst lengths supported
Number of banks on SDRAM
device
CAS latencies supported
Module thickness
DDR2 DIMM type
SDRAM module attributes
SDRAM device attributes: weak
driver (01) and 50Ω ODT (03)
SDRAM cycle time,
MAX CL - 1
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 17
Description
t
t
CK (CL =
CK,
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 Registered MiniDIMM
t
AC
ECC and parity
-53E/-40E (4, 3)
-80E/-800/-667
DDR2 SDRAM
-667 (5, 4, 3)
7.81µs/SELF
single rank
MiniDIMM
Registered
(Version)
-80E (5, 4)
-800 (6, 5)
SSTL 1.8V
-80E/-800
-80E/-800
-53E/-40E
-80E/-667
-53E/-40E
30mm,
1 clock
13, 14
Entry
4 or 8
-667
-53E
-40E
-667
-53E
-40E
-800
ECC
128
256
4, 8
10
72
0
8
8
15
MT9HTF3272(P)K
MT9HTF3272K/
–/3D
–/03
0D
0A
3D
08
0C
80
08
60
48
00
05
30
50
45
50
60
02
06
82
08
08
00
04
38
18
01
10
04
01
50
–
–
–
–
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Register and PLL Specifications
MT9HTF6472(P)K
MT9HTF6472K/
0A
3D
3D
80
08
08
0E
60
48
00
05
25
30
50
40
45
50
60
02
06
82
08
08
00
0C
04
30
60
38
18
01
10
04
03
01
30
50
©2005 Micron Technology, Inc. All rights reserved.
MT9HTF12872K(P)K
MT9HTF12872K/
0A
3D
3D
80
08
08
0E
60
48
00
05
25
30
50
40
45
50
60
02
06
82
08
08
00
0C
08
60
60
38
18
01
10
04
03
01
30
50