MT9VDDT6472PHG-40BF2 Micron Technology Inc, MT9VDDT6472PHG-40BF2 Datasheet - Page 17

• Manufacturer Part Number: MT9VDDT6472PHG-40BF2
• Description: MODULE DDR SDRAM 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDT6472PHG-40BF2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 16: Capacitance)
Note: 11; notes appear on pages 19–22
Table 17: Electrical Characteristics and Recommended AC Operating Conditions
DDR SDRAM components only; notes appear on pages 19–22
Notes: 1–5, 12–15, 29, 47; 0°C
pdf: 09005aef808ffe58, source: 09005aef808ffdc7
DD9C16_32_64_128x72PHG.fm - Rev. B 9/04 EN
PARAMETER
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to
DQS
DQ and DM input setup time relative to
DQS
DQ and DM input pulse width (for each
input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per
group, per access
Write command to first DQS latching
transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold
time
Half clock period
Data-out high-impedance window from
CK/CK#
Data-out low-impedance window from
CK/CK#
Address and control input hold time
(slow slew rate)
Address and control input setup time
(slow slew rate)
Address and Control input pulse width
(for each input)
LOAD MODE REGISTER command cycle
time
PARAMETER
Input/Output Capacitance: DQ, DQS, DM
Input Capacitance: Command and Address, S#, CKE
Input Capacitance: CK, CK#
AC CHARACTERISTICS
CL = 2.5
CL = 2
T
A
+70°C; V
128MB, 256MB, 512MB, 1GB (x72, ECC, PLL, SR)
SYMBOL
t
t
CK (2.5)
t
t
DD
DQSCK
t
t
t
t
t
CK (2)
DQSH
DQSQ
DIPW
DQSL
DQSS
t
t
t
MRD
t
t
t
t
t
DSH
t
t
IPW
t
DSS
t
t
DH
AC
CH
IH
DS
HP
HZ
IS
CL
LZ
= V
S
S
DD
Q = +2.5V ±0.2V
-0.60
-0.70
MIN
0.45
0.45
0.45
0.45
1.75
0.35
0.35
0.75
0.75
0.75
0.80
-0.7
7.5
0.2
0.2
2.2
6
t
CH,
-335
17
t
CL
+0.60
+0.70
MAX
+0.7
0.55
0.55
0.45
1.25
13
13
SYMBOL
200-PIN DDR SDRAM SODIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
C
C
C
IO
I 1
I 2
-0.75
-0.75
-0.75
MIN
0.90
0.90
0.45
0.45
1.75
0.35
0.35
0.75
7.5
7.5
0.5
0.5
0.2
0.2
2.2
15
t
CH,
-262
t
CL
MAX
+0.75
+0.75
+0.75
0.55
0.55
1.25
0.5
13
13
MIN
18.0
4.0
-
-0.75
-0.75
-0.75
MIN
0.45
0.45
1.75
0.35
0.35
0.75
7.5
0.5
0.5
0.2
0.2
1.1
1.1
2.2
10
15
-26A/-265
t
©2004 Micron Technology, Inc. All rights reserved.
CH,
TYP
7.7
-
-
t
CL
MAX
+0.75
+0.75
+0.75
0.55
0.55
1.25
0.6
13
13
MAX
27.0
5.0
-
UNITS NOTES
ADVANCE
t
t
t
t
t
t
t
ns
CK
CK
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
UNITS
pF
pF
pF
40, 45
40, 45
23, 27
23, 27
22, 23
16, 37
16, 37
26
26
27
30
12
12