MT9VDDT6472PHG-40BF2 Micron Technology Inc, MT9VDDT6472PHG-40BF2 Datasheet - Page 19
![MODULE DDR SDRAM 512MB 200SODIMM](/photos/7/83/78349/mfg_mt_sodimm_series_sml.jpg)
MT9VDDT6472PHG-40BF2
Manufacturer Part Number
MT9VDDT6472PHG-40BF2
Description
MODULE DDR SDRAM 512MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9VDDT1672PHG-335D2.pdf
(33 pages)
Specifications of MT9VDDT6472PHG-40BF2
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Notes
pdf: 09005aef808ffe58, source: 09005aef808ffdc7
DD9C16_32_64_128x72PHG.fm - Rev. B 9/04 EN
10. I
11. This parameter is sampled. V
1. All voltages referenced to V
2. Tests for AC timing, I
3. Outputs measured with equivalent load:
4. AC timing and I
5. The AC and DC input level specifications are as
6. V
7. V
8. I
9. Enables on-chip refresh and address counters.
characteristics may be conducted at nominal ref-
erence/supply voltage levels, but the related spec-
ifications and device operation are guaranteed for
the full voltage range specified.
swing of up to 1.5V in the test environment, but
input timing is still referenced to V
crossing point for CK/CK#), and parameter speci-
fications are guaranteed for the specified AC input
levels under normal use conditions. The mini-
mum slew rate for the input signals used to test
the device is 1V/ns in the range between V
and V
defined in the SSTL_2 Standard (i.e., the receiver
will effectively switch as a result of the signal
crossing the AC input level, and will remain in that
state as long as the signal does not ring back
above [below] the DC input LOW [HIGH] level).
ting device and to track variations in the DC level
of the same. Peak-to-peak noise (non-common
mode) on Vref may not exceed ±2 percent of the
DC value. Thus, from V
±25mV for DC error and an additional ±25mV for
AC noise. This measurement is to be taken at the
nearest V
system supply for signal termination resistors, is
expected to be set equal to V
variations in the DC level of V
rates. Specified values are obtained with mini-
mum cycle time at CL = 2 for -26A and -202, CL =
2.5 for -335 and -265 with the outputs open.
properly initialized, and is averaged at the defined
cycle rate.
V
25°C, V
DD
DD
REF
TT
DD
Q =
is not applied directly to the device. V
is dependent on output loading and cycle
specifications are tested after the device is
is expected to equal V
IH
OUT
(
+2.5V ±0.2V
AC
REF
).
(
DC
Output
(V
bypass capacitor.
OUT
) = V
)
DD
DD
, V
DD
V
tests may use a V
TT
REF
Q/2, V
50
30pF
, and electrical AC and DC
Reference
Point
DD
= V
SS
DD
Q/2, Vref is allowed
OUT
.
SS
REF
Q/2 of the transmit-
REF
, f = 100 MHz, T
DD
128MB, 256MB, 512MB, 1GB (x72, ECC, PLL, SR)
.
(peak to peak) =
and must track
=
REF
+2.5V ±0.2V
(or to the
IL
-to-V
TT
IL
(
is a
AC
A
IH
=
)
,
19
12. For slew rates < 1 V/ns and to 0.5 Vns. If the slew
13. The CK/CK# input reference level (for timing ref-
14. Inputs are not recognized as valid until V
15. The output timing reference level, as measured at
16.
17. The intent of the Don’t Care state after completion
18. This is not a device limit. The device will operate
19. It is recommended that DQS be valid (HIGH or
20. MIN (
21. The refresh period 64ms. This equates to an aver-
200-PIN DDR SDRAM SODIMM
0.2V. DM input is grouped with I/O pins, reflecting
the fact that they are matched in loading.
rate is < 0.5V/ns, timing must be derated:
an additional 50ps per each 100 mV/ns reduction
in slew rate from 500 mV/ns, while
fected. If the slew rate exceeds 4.5 V/ns, function-
ality is uncertain. For -335, slew rates must be
0.5 V/ns.
erenced to CK/CK#) is the point at which CK and
CK# cross; the input reference level for signals
other than CK/CK# is V
lizes. Exception: during the period before V
stabilizes, CKE 0.3 x V
the timing reference point indicated in Note 3, is
V
t
time windows as data valid transitions. These
parameters are not referenced to a specific voltage
level, but specify when the device output is no
longer driving (HZ) or begins driving (LZ).
of the postamble is the DQS-driven signal should
either be high, low, or high-Z and that any signal
transition within the input switching region must
follow valid input requirements. That is, if DQS
transitions high [above V
not transition low (below V
(MIN).
with a negative value, but system performance
could be degraded due to bus turnaround.
LOW) on or before the WRITE command. The
case shown (DQS going from High-Z to logic
LOW) applies when no WRITEs were previously in
progress on the bus. If a previous WRITE was in
progress, DQS could be HIGH during this time,
depending on
smallest multiple of
absolute value for the respective parameter.
(MAX) for I
ple of
value for
age refresh rate of 15.625µs (128MB), or 7.8251µs
HZ and
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TT
.
t
RC or
t
CK that meets the maximum absolute
t
t
LZ transitions occur in the same access
RAS.
DD
t
RFC) for I
t
measurements is the largest multi-
DQSS.
t
CK that meets the minimum
REF
DD
©2004 Micron Technology, Inc. All rights reserved.
DD
IHDC
Q is recognized as LOW.
.
IHDC
measurements is the
(MIN)] then it must
) prior to
ADVANCE
t
IH is unaf-
REF
t
t
DQSH
IS has
stabi-
t
RAS
REF