MT18VDVF12872DG-40BF1 Micron Technology Inc, MT18VDVF12872DG-40BF1 Datasheet

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MT18VDVF12872DG-40BF1

Manufacturer Part Number
MT18VDVF12872DG-40BF1
Description
MODULE DDR 1GB 184-DIMM VLP
Manufacturer
Micron Technology Inc

Specifications of MT18VDVF12872DG-40BF1

Memory Type
DDR SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184VLPRDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.6V
Operating Current
1.8A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
PDF: 09005aef81c73825/Source: 09005aef81c73837
DVF18C_128x72D.fm - Rev. B 10/07 EN
DDR SDRAM VLP RDIMM
MT18VDVF12872D – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 184-pin, very low profile registered dual in-line
• Fast data transfer rates: PC2700 or PC3200
• 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined, double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Dual rank
• Selectable burst lengths (BL) 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
Table 1:
memory module (VLP RDIMM)
(-40B: V
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
Speed
Grade
-40B
-335
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Nomenclature
Q = +2.6V)
Industry
PC3200
PC2700
CL = 3
400
Data Rate (MT/s)
CL = 2.5
www.micron.com
333
333
1
1GB (x72, ECC, DR) 184-Pin DDR VLP RDIMM
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 18.29mm (0.72in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3.0
– 6.0ns (166 MHz), 333 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 2
2. CL = CAS (READ) latency; registered mode
266
266
module offerings.
adds one clock cycle to CL.
184-Pin VLP RDIMM (MO-206)
t
(ns)
RCD
15
15
A
A
1
≤ +85°C)
≤ +70°C)
©2005 Micron Technology, Inc. All rights reserved.
(ns)
t
15
15
RP
2
Marking
Features
None
-40B
-335
(ns)
t
55
60
RC
G
Y
I

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MT18VDVF12872DG-40BF1 Summary of contents

Page 1

DDR SDRAM VLP RDIMM MT18VDVF12872D – 1GB For component data sheets, refer to Micron’s Web site: Features • 184-pin, very low profile registered dual in-line memory module (VLP RDIMM) • Fast data transfer rates: PC2700 or PC3200 • 1GB (128 ...

Page 2

... Part Number Density MT18VDVF12872DG-40B__ MT18VDVF12872DY-40B__ MT18VDVF12872DG-335__ MT18VDVF12872DY-335__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. ...

Page 3

Pin Assignments and Descriptions Table 4: Pin Assignments 184-Pin DDR VLP RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 ...

Page 4

Table 5: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0#, CKE0, CKE1 DM0–DM8 RESET# S0#, S1# SA0–SA2 SCL WE#, CAS#, RAS# CB0–CB7 DQ0–DQ63 DQS0–DQS8 SDA DDSPD V REF PDF: 09005aef81c73825/Source: 09005aef81c73837 ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram RS1# RS0# DQS0 DM0 DM CS# DQS DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1 DM1 DM CS# DQS DQ8 DQ DQ9 DQ ...

Page 6

... READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 7

... Simulations are significantly more accurate and realistic than a gross estimation of module capacitance when inductance and delay parameters associated with trace lengths are used in simulations. JEDEC modules are currently designed using simulations to close timing budgets. Component AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR component data sheets. Component specifications are available on Micron’ ...

Page 8

I Specifications DD Table 8: I Specifications and Conditions – 1GB DD Values are shown for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 9

Register and PLL Specifications Table 9: Register Specifications SSTV16859 devices or equivalent JESD82-4B Parameter Symbol high-level IH DC input voltage low-level IL DC input voltage AC high-level ...

Page 10

Table 10: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter Symbol DC high-level input voltage low-level input voltage Input voltage (limits Input differential-pair cross IX voltage Input differential voltage ...

Page 11

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 12

Module Dimensions Figure 3: 184-Pin DDR VLP RDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) TYP 1.0 (0.039) TYP 64.77 (2.55) U12 U13 U14 Pin 184 ...

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