MT16HTS25664HY-53EA1 Micron Technology Inc, MT16HTS25664HY-53EA1 Datasheet - Page 12

• Manufacturer Part Number: MT16HTS25664HY-53EA1
• Description: MODULE DDR2 2GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTS25664HY-53EA1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 533MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 9:
Table 10:
Figure 7:
PDF: 09005aef821e5bf3/Source: 09005aef82198d54
HTS16C256x64H.fm - Rev. A 4/06 EN
Select Code
Mode
Memory area select code (two arrays)
Protection register select code
Current address read
Random address read
Sequential read
Byte write
Page write
SDA OUT
SDA IN
SCL
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t SU:STA
RW Bit
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
b7
t HIGH
IL
IL
IL
IL
1
0
t HD:DAT
Device Type Identifier
2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Bytes
≤ 16
12
≥ 1
1
1
1
1
b6
0
1
t DH
t R
Initial Sequence
START, Device select, RW = ‘1’
START, Device select, RW = ‘0’, Address
reSTART, Device select, RW = ‘1’
Similar to current or random address read
START, Device select, RW = ‘0’
START, Device select, RW = ‘0’
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
t SU:DAT
1
1
b4
0
0
SA2
SA2
b3
Serial Presence-Detect
Chip Enable
©2006 Micron Technology, Inc. All rights reserved.
t SU:STO
SA1
SA1
b2
t BUF
UNDEFINED
SA0
SA0
b1
RW
RW
RW
b0