MT16HTS25664HY-53EA1 Micron Technology Inc, MT16HTS25664HY-53EA1 Datasheet - Page 8
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MT16HTS25664HY-53EA1
Manufacturer Part Number
MT16HTS25664HY-53EA1
Description
MODULE DDR2 2GB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16HTS25664HY-53EA1.pdf
(16 pages)
Specifications of MT16HTS25664HY-53EA1
Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
533MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Specifications
Absolute Maximum Ratings
Table 6:
Capacitance
PDF: 09005aef821e5bf3/Source: 09005aef82198d54
HTS16C256x64H.fm - Rev. A 4/06 EN
Parameter
V
V
V
Voltage on any pin relative to V
Storage temperature
DDR2 SDRAM device operating temperature (ambient)
Operating temperature (ambient)
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
DD
DD
DD
REF
REF
Q supply voltage relative to V
L supply voltage relative to Vss
supply voltage relative to V
input 0V ≤ V
leakage current; V
Absolute Maximum DC Ratings
IN
≤0.95V; (All other pins not under
REF
= Valid V
Stresses greater than those listed in Table 6 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
At DDR2 data rates, Micron encourages designers to simulate the performance of the
module to achieve optimum values. When inductance and delay parameters associated
with trace lengths are used in simulations, they are significantly more accurate and real-
istic than a gross estimation of module capacitance. Simulations can then render a
considerably more accurate result. JEDEC modules are now designed by using simula-
tions to close timing budgets.
OUT
SS
SS
SS
≤ V
REF
DD
level
IN
Q; DQs and
≤ V
DD
;
Command/Address,
RAS#, CAS#, WE# S#,
CKE
CK, CK#
DM
DQ, DQS, DQS#
2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
Symbol
IN
V
V
T
T
V
T
I
DD
, V
CASE
I
V
DD
OPR
STG
OZ
DD
I
REF
I
OUT
Q
L
Electrical Specifications
©2006 Micron Technology, Inc. All rights reserved.
Min
–1.0
–0.5
–0.5
–0.5
–55
–80
–40
–10
–10
–32
0
0
Max
100
2.3
2.3
2.3
2.3
85
65
80
40
10
10
32
Units
µA
µA
µA
°C
°C
°C
V
V
V
V