MT36HTS51272FY-53EA3E3 Micron Technology Inc, MT36HTS51272FY-53EA3E3 Datasheet - Page 30

• Manufacturer Part Number: MT36HTS51272FY-53EA3E3
• Description: MODULE DDR2 4GB 240FBDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36HTS51272FY-53EA3E3

• Memory Type: DDR2 SDRAM
• Memory Size: 4GB
• Speed: 533MT/s
• Package / Case: 240-FBDIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 14:
Table 15:
Figure 11:
PDF: 09005aef822148b0/source: 09005aef82214898
HTS36C512x72F_2.fm - Rev. A 4/06 EN
Select Code
Memory area select code (two arrays)
Protection register select code
Mode
Current address read
Random address read
Sequential read
Byte write
Page write
SDA OUT
SDA IN
SCL
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t SU:STA
RW Bit
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
t HD:DAT
240-Pin 4GB DDR2 SDRAM FBDIMM (DR, FB, x72)
b7
1
0
Device Type Identifier
Bytes
30
≤16
≥1
1
1
1
1
t DH
b6
0
1
t R
Initial Sequence
Start, device select, RW = ‘1’
Start, device select, RW = ‘0’, Address
Restart, device select, RW = ‘1’
Similar to current or random address read
Start, device select, RW = ‘0’
Start, device select, RW = ‘0’
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t SU:DAT
b5
1
1
b4
0
0
SA2
SA2
b3
Serial Presence-Detect
Chip Enable
©2006 Micron Technology, Inc. All rights reserved.
t SU:STO
SA1
SA1
b2
t BUF
UNDEFINED
SA0
SA0
b1
Preliminary
RW
RW
RW
b0