MT9HVF6472PY-667D1 Micron Technology Inc, MT9HVF6472PY-667D1 Datasheet - Page 17

MODULE DDR2 512MB 240-DIMM

MT9HVF6472PY-667D1

Manufacturer Part Number
MT9HVF6472PY-667D1
Description
MODULE DDR2 512MB 240-DIMM
Manufacturer
Micron Technology Inc

Specifications of MT9HVF6472PY-667D1

Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
667MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Access Time (max)
45ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.62A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 90C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1208
MT9HVF6472PY-667D1
Table 13: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef81de9391
hvf9c32_64_128x72py.pdf - Rev. E 03/10 EN
Parameter
Operating bank interleave read current: All device banks inter-
leaving reads, I
t
t
bus inputs are stable during deselects; Data bus inputs are switching
CK (I
RCD
DD
DD
);
); CKE is HIGH, S# is HIGH between valid commands; Address
t
CK =
OUT
t
CK (I
= 0mA; BL = 4, CL = CL (I
DD
DD
Specifications and Conditions (Die Revision E) – 1GB (Continued)
),
t
RC =
t
RC (I
256MB, 512MB, 1GB (x72, ECC, SR) 240-Pin DDR2 VLP RDIMM
DD
),
t
RRD =
DD
), AL =
t
RRD (I
t
RCD (I
DD
),
t
RCD =
DD
17
) - 1 ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/
-800
3015
2700
-667
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
2610
-53E
Specifications
-40E
2340
Units
mA

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