MT9HTF6472RHY-667D1 Micron Technology Inc, MT9HTF6472RHY-667D1 Datasheet - Page 11

• Manufacturer Part Number: MT9HTF6472RHY-667D1
• Description: MODULE DDR2 512MB 200-SORDIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472RHY-667D1

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 667MT/s
• Package / Case: 200-SORDIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 9: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
PDF: 09005aef828742dd
htf9c64_128x72rh.pdf - Rev. D 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
(I
HIGH between valid commands; Address bus inputs are stable during deselects;
Data bus inputs are switching
DD
),
t
RC =
OUT
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
DD
),
t
RRD =
Specifications and Conditions – 512MB (Continued)
t
RRD (I
DD
DD
512MB, 1GB (x72, ECC, SR) 200-Pin DDR2 SDRAM SORDIMM
),
), AL =
t
RCD =
t
RCD (I
t
RCD (I
DD
DD
) - 1 ×
); CKE is HIGH, S# is
11
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CK
Symbol
I
DD7
-80E/-
2700
800
© 2007 Micron Technology, Inc. All rights reserved.
I
DD
-667
2160
Specifications
2025
-53E
Units
mA