VSMF3710-GS08 Vishay, VSMF3710-GS08 Datasheet

EMITTER IR PLCC-2 HI SPD 890NM

VSMF3710-GS08

Manufacturer Part Number
VSMF3710-GS08
Description
EMITTER IR PLCC-2 HI SPD 890NM
Manufacturer
Vishay
Datasheets

Specifications of VSMF3710-GS08

Rise Time
30 ns
Radiant Intensity
10 mW/sr
Viewing Angle
120°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
6mW/sr @100mA
Wavelength
890nm
Voltage - Forward (vf) Typ
1.6V
Orientation
Top View
Mounting Type
Surface Mount
Package / Case
PLCC-2
Beam Angle
60 deg
Maximum Forward Current
100 mA
Maximum Power Dissipation
170 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Fall Time
30 ns
Forward Current
100 mA
Forward Voltage
1.4 V
Lens Shape
Circular
Mounting Style
SMD/SMT
Peak Wavelength
890nm
Forward Current If(av)
100mA
Fall Time Tf
30ns
Supply Voltage Range
1.4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1253-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VSMF3710-GS08
Quantity:
239
Company:
Part Number:
VSMF3710-GS08
Quantity:
70 000
High Speed Infrared Emitting Diode, 890 nm
RoHS Compliant, Released for Lead (Pb)-free Solder Process
Description
VSMF3710 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology in a miniature
PLCC-2 SMD package.
DH technology combines high speed with high radiant
power at wavelength of 890 nm.
Features
Order Instructions
Absolute Maximum Ratings
T
Document Number 81241
Rev. 1.5, 25-Jan-07
• High radiant power
• High speed: t
• High modulation band width: f
• Peak wavelength: λ
• High reliability
• Low forward voltage
• Suitable for high pulse current application
• Wide angle of half intensity
• Compatible with automatic placement equipment
• EIA and ICE standard package
• 8 mm tape and reel standard: GS08 or GS18
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
VSMF3710
VSMF3710
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance
junction / ambient
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Part
Parameter
r
= 30 ns
p
= 890 nm
t
t
acc. figure 8, J-STD-020B
p
p
/T = 0.5, t
= 100 µs
c
= 12 MHz
Test condition
VSMF3710-GS08
VSMF3710-GS18
p
Ordering code
= 100 µs
e3
Applications
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective
sensors
Symbol
R
T
I
T
I
FSM
T
V
P
amb
FM
thJA
I
T
stg
sd
F
R
V
j
MOQ: 7500 pcs, 1500 pcs per reel
MOQ: 8000 pcs, 8000 pcs per reel
- 40 to + 100
- 40 to + 85
Vishay Semiconductors
Value
100
200
170
100
260
400
5
1
Remarks
VSMF3710
94 8553
www.vishay.com
K/W
Unit
mW
mA
mA
°C
°C
°C
°C
V
A
1

Related parts for VSMF3710-GS08

VSMF3710-GS08 Summary of contents

Page 1

... Thermal resistance junction / ambient Document Number 81241 Rev. 1.5, 25-Jan- MHz e3 c Applications • High speed IR data transmission • High power emitter for low space applications • High performance transmissive or reflective sensors Ordering code VSMF3710-GS08 VSMF3710-GS18 Test condition Symbol 100 µ ...

Page 2

... VSMF3710 Vishay Semiconductors 180 160 R thJA 140 120 100 Ambient Temperature (°C) 20140 amb Figure 1. Power Dissipation Limit vs. Ambient Temperature Basic Characteristics °C, unless otherwise specified amb Parameter I = 100 mA, t Forward voltage Temp. coefficient 100 Reverse current MHz Junction capacitance 100 mA, t ...

Page 3

... Rev. 1.5, 25-Jan-07 1.25 < 60 °C 0.05 0.75 0.25 100 10 20082 Figure 6. Relative Radiant Power vs. Wavelength 8013 Figure 7. Relative Radiant Intensity vs. Angular Displacement p 1000 VSMF3710 Vishay Semiconductors 1.0 0.5 0 1000 800 900 λ - Wavelength (nm) 0° 10° 20° 1.0 0.9 0.8 0.7 ...

Page 4

... VSMF3710 Vishay Semiconductors Package Dimensions 20541_1 www.vishay.com 4 Mounting Pad Layout 1.2 area covered with solder resist 4 1.6 (1.9) Document Number 81241 Rev. 1.5, 25-Jan-07 ...

Page 5

... Adhesive Tape 250 300 200 948626-1 Lead Temperature full line: typical ca. 5 K/s 250 200 1.6 1.4 Figure 11. Tape Dimensions in mm for PLCC-2 VSMF3710 Vishay Semiconductors Blister Tape Component Cavity Figure 10. Blister Tape 3.5 2.2 3.1 2.0 5.75 5.25 8.3 3.6 7 ...

Page 6

... VSMF3710 Vishay Semiconductors Missing Devices A maximum of 0 the total number of compo- nents per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction > ...

Page 7

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81241 Rev. 1.5, 25-Jan-07 and may do so without further notice. VSMF3710 Vishay Semiconductors www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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