CQY37N Vishay, CQY37N Datasheet - Page 3
![DIODE IR EMITTER GAAS 1.8MM](/photos/7/99/79904/cqy37n_sml.jpg)
CQY37N
Manufacturer Part Number
CQY37N
Description
DIODE IR EMITTER GAAS 1.8MM
Manufacturer
Vishay
Specifications of CQY37N
Radiant Intensity
5 mW/sr
Viewing Angle
24°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
2.2mW/sr @ 50mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.3V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 1.8mm (T-3/4)
Maximum Forward Current
100 mA
Maximum Power Dissipation
170 mW
Maximum Operating Temperature
+ 100 C
Lens Shape
Circular
Peak Wavelength
950nm
Forward Current If(av)
50mA
Rise Time
800ns
Supply Voltage Range
1.3V
Operating Temperature Range
-25°C To +85°C
Diode Case Style
T-3/4
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1027
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CQY37N
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number 81002
Rev. 1.4, 08-Mar-05
Figure 7. Rel. Radiant Intensity/Power vs. Ambient Temperature
94 7920
13718
94 7993
100
100
0.1
0.1
1.6
1.2
0.8
0.4
10
10
-10
1
1
0
Figure 5. Radiant Intensity vs. Forward Current
10
1
Figure 6. Radiant Power vs. Forward Current
0
0
T
10
amb
I
F
10
I
- Ambient Temperature ( ° C )
F
- Forward Current ( mA )
1
10
– Forward Current ( mA )
50
10
I
F
2
100
= 20 mA
100
10
3
1000
140
10
4
Figure 9. Relative Radiant Intensity vs. Angular Displacement
94 7994
94 7922
1.25
0.75
0.25
1.0
0.5
1.0
0.9
0.8
0.7
Figure 8. Relative Radiant Power vs. Wavelength
0
900
0.6
0.4
λ
- Wavelength ( nm )
0.2
I
F
= 100 mA
950
Vishay Semiconductors
0°
0
0.2
10
°
0.4
20
°
CQY37N
0.6
1000
30°
40°
50°
60°
70°
80°
www.vishay.com
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