HSMF-A341-A00J1 Avago Technologies US Inc., HSMF-A341-A00J1 Datasheet - Page 6

• Manufacturer Part Number: HSMF-A341-A00J1
• Description: LED RED/GREEN/BLUE 40MCD 5V SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of HSMF-A341-A00J1

• Package / Case: 4-PLCC
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Color: Red, Green, Blue (RGB)
• Lens Style/size: Round with Flat Top
• Voltage - Forward (vf) Typ: 1.9V Red, 3.4V Green, 3.4V Blue
• Millicandela Rating: 80mcd Red, 160mcd Green, 40mcd Blue
• Luminous Flux @ Current - Test: 251 mlm Red, 503 mlm Green, 126 mlm Blue
• Current - Test: 20mA
• Lens Type: Clear
• Wavelength - Peak: 635nm, 523nm, 468nm
• Resistance Tolerance: 626nm, 525nm, 470nm
• Led Size: 3.2 mm x 2.8 mm
• Illumination Color: Red, Green, Blue
• Lens Color/style: Diffused
• Operating Voltage: 1.9 V, 3.4 V, 3.4 V
• Wavelength: 626 nm, 525 nm, 470 nm
• Luminous Intensity: 80 mcd, 160 mcd, 40 mcd
• Mounting Style: SMD/SMT
• Operating Current: 20 mA
• Lens Shape: Flat Round
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Peak Wavelength: 635 nm, 523 nm, 468 nm
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q2039136

Figure 1. Relative intensity vs. wavelength
Figure 2. Forward current vs. forward voltage
6
35
30
25
20
15
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
5
0
0
0
0
380
AS AlInGaP
380
GREEN
AlGaAs
CYAN
FORWARD VOLTAGE – V
BLUE
1
GaP
430
430
2
EMERALD
480
480
YELLOW
3
GaN BLUE
GREEN
GREEN
GaP
GaP
4
InGaN
GaN
BLUE
530
530
WAVELENGTH – nm
WAVELENGTH – nm
5
580
580
Figure 3. Relative intensity vs. forward voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
630
630
0
0
DC FORWARD CURRENT – mA
5
680
680
YELLOW GREEN
AMBER
ORANGE
10
RED ORANGE
RED
GaP YELLOW
GaP ORANGE
GaP RED
15
AlInGaP
AlGaAs
730
730
20
Gap
25
780
780
GaN
30
InGaN
35
Figure 4a. Maximum forward current vs. ambient
temperature. Derated based on T
R
JA
35
30
25
20
15
10
= 500°C/W (1 chip on)
5
0
0
AS AlInGaP
20
InGaN/GaN
TEMPERATURE – °C
40
GaP
60
80
J
MAX = 110°C,
AlGaAs
100
120