EVAL6229PD STMicroelectronics, EVAL6229PD Datasheet - Page 3

• Manufacturer Part Number: EVAL6229PD
• Description: EVAL BOARD FOR L6229PD SOIC
• Manufacturer: STMicroelectronics

Specifications of EVAL6229PD

• Mfg Application Notes: L6235, AN1625 App Note
• Main Purpose: Power Management, Motor Control
• Embedded: No
• Utilized Ic / Part: L6229PD SOIC
• Primary Attributes: 3-Ph BLDC, 8 ~ 52V Output, PWM Current Control, Brake Function
• Secondary Attributes: Over Current, Cross Conduction & Temperature Protection
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5491

2
2.1 Current Ratings
With MOSFET (DMOS) devices, unlike bipolar transistors, current under short circuit conditions is, at first ap-
proximation, limited by the R
and the two V
sponding to a total (for the whole IC) 5.6A rms (11.2A peak). These values are meant to avoid damaging metal
structures, including the metallization on the die and bond wires. In practical applications, though, maximum al-
lowable current is less than these values, due to power dissipation limits (see Power Management section).
The device has a built-in Over Current Detection (OCD) that provides protection against short circuits between
the outputs and between an output and ground (see Over Current Protection section).
2.2 Voltage Ratings and Operating Range
The L6208 requires a single supply voltage (V
5V and 10V required for the internal circuitry. The operating range for V
undesirable low supply voltage an Under Voltage Lock Out (UVLO) circuit shuts down the device when supply
voltage falls below 6V; to resume normal operating conditions, V
vided to avoid false intervention of the UVLO function during fast V
DMOS's R
affected, and this is particularly true for the High Side DMOS that are driven from V
obtained through a charge pump from the internal 10V supply, which will tend to reduce its output voltage when
V
supply voltage (V
Figure 2. High side gate drivers supply voltage versus supply voltage.
Note that V
the two H-bridges. The integrated DMOS have a rated Drain-Source breakdown voltage of 60V. However V
should be kept below 52V, since in normal working conditions the DMOS see a V
supply. In particular, when using the fast decay mode, at the beginning of the off-time (when all the DMOS are
off during dead-time) the SENSE pin sees a negative spike due to a not negligible parasitic inductance of the
PCB path from the pin to GND. This spike is followed by a stable negative voltage due to the drop on R
One of the two OUT pins of the bridge sees a similar behavior, but with a slightly larger voltage due to the for-
ward recovery time of the integrated freewheeling diode and the forward voltage drop across it (see Figure 3).
Typical duration of this spike is 30ns. At the same time, the other OUT pin of the same bridge sees a voltage
S
goes below 10V. Figure 2 shows the supply voltage of the high side gate drivers (V
DESIGNING AN APPLICATION WITH L6208
V
BOOT
DS(ON)
[V]
S
must be connected to both V
SA
- V
S
and V
S
is a function of the V
).
7 .6
7 .2
6 .8
6 .4
8
6
SB
pins are rated for a maximum of 2.8A r.m.s. and 5.6A peak (typical values), corre-
DS(ON)
8
of the DMOS themselves and could reach very high values. L6208 Out pins
S
supply voltage. Actually, when V
8 .5
SA
and V
S
), for the motor supply. Internal voltage regulators provide the
SB
since the bootstrap voltage (at V
9
V
S
[V]
S
9 .5
must then exceed 7V. The hysteresis is pro-
S
ringings. It should be noted, however, that
S
S
is less than 10V, R
AN1451 APPLICATION NOTE
is 8 to 52V. To prevent working into
1 0
ds
BOOT
voltage that will exceed V
BOOT
BOOT
supply. This supply is
1 0 .5
pin) is the same for
DS(ON)
- V
S
) versus the
is adversely
SENSE
3/43
S
S
.