KIT33887PNBEVB Freescale Semiconductor, KIT33887PNBEVB Datasheet - Page 26

no-image

KIT33887PNBEVB

Manufacturer Part Number
KIT33887PNBEVB
Description
KIT EVAL 33887 5A H-BRIDGE PQFN
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of KIT33887PNBEVB

Main Purpose
Power Management, H Bridge Driver (Internal FET)
Embedded
No
Utilized Ic / Part
MC33887
Primary Attributes
5A, 5 ~ 28V, PWM to 20kHz, Active Current Limit
Secondary Attributes
Fault Status, Sleep Mode, Proportional Current Mirror Output
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
performance. The significant feature of these packages is the
exposed pad on which the power die is soldered. When
soldered to a PCB, this pad provides a path for heat flow to
the ambient environment. The more copper area and
thickness on the PCB, the better the power dissipation and
transient behavior will be.
bottom side area of copper is 7.8 cm
(see
26
33887
PACKAGING
SOLDERING INFORMATION
The 33887 packages are designed for thermal
Example Characterization on a double-sided PCB:
Figure
); grid array of 24 vias 0.3 mm in diameter
2
; top surface is 2.7 cm
SOLDERING INFORMATION
PACKAGING
2
.
Top Side
Figure 24. PCB Test Layout
Analog Integrated Circuit Device Data
Freescale Semiconductor
Bottom Side

Related parts for KIT33887PNBEVB