KIT33984PNAEVB Freescale Semiconductor, KIT33984PNAEVB Datasheet - Page 6

KIT PRELIM EVALUATION MC3398PNA

KIT33984PNAEVB

Manufacturer Part Number
KIT33984PNAEVB
Description
KIT PRELIM EVALUATION MC3398PNA
Manufacturer
Freescale Semiconductor
Type
Other Power Managementr
Datasheet

Specifications of KIT33984PNAEVB

Main Purpose
Power Management, High Side Driver (Internal FET)
Embedded
No
Utilized Ic / Part
MC33984
Primary Attributes
Output current monitoring, 2 SPI-selectable current ratios
Secondary Attributes
SPI control of over-current limit, open load detection, output ON/OFF, slew rates
Input Voltage
6 V to 27 V
Interface Type
SPI
Product
Power Management Modules
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
MC33984
Table 3. Maximum Ratings
6
33984
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL RATINGS
Output Voltage
Notes
Operating Voltage Range
VDD Supply Voltage
Input/Output Voltage
SO Output Voltage
WAKE Input Clamp Current
CSNS Input Clamp Current
Output Current
Output Clamp Energy
ESD Voltage
1.
2.
3.
4.
All voltages are with respect to ground unless otherwise noted.
Steady-state
Positive
Negative
33984B
33984C
Human Body Model (HBM)
Charge Device Model (CDM)
Corner Pins (1, 12, 15, 16)
All Other Pins (2, 11, 13, 14)
Exceeding this voltage limit may cause permanent damage to the device.
Continuous high side output current rating so long as maximum junction temperature is not exceeded. Calculation of maximum output
current using package thermal resistance is required.
Active clamp energy using single-pulse method (L = 16 mH, R
ESD1 testing is performed in accordance with the Human Body Model (HBM) (C
performed in accordance with the Charge Device Model (CDM), Robotic (Czap = 4.0 pF).
(4)
(2)
(1)
(1)
(3)
Rating
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
L
= 0,V
CSNS, SI, SCLK,
V
PWR
IN[0:1]
I
I
Symbol
CL(WAKE)
CL(CSNS)
E
CS, FS
I
V
V
V
HS[0:1]
= 12 V, T
CL[0:1]
V
V
V
,
ESD1
ESD3
PWR
DD
RST
SO
HS
ZAP
, FSI
J
= 100 pF, R
= 150°C).
Analog Integrated Circuit Device Data
- 0.3 to V
ZAP
- 0.3 to 7.0
-0.3 to 5.5
-16 to 41
= 1500 Ω); ESD3 testing is
± 2000
Value
±750
±500
0.75
-15
2.5
0.5
10
41
30
DD
Freescale Semiconductor
+ 0.3
Unit
mA
mA
V
V
V
V
V
A
V
J

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