EL7535EVAL1 Intersil, EL7535EVAL1 Datasheet - Page 2

• Manufacturer Part Number: EL7535EVAL1
• Description: EVALUATION BOARD FOR EL7535
• Manufacturer: Intersil

Specifications of EL7535EVAL1

• Main Purpose: DC/DC, Step Down
• Outputs And Type: 1, Non-Isolated
• Voltage - Output: 1.8V
• Current - Output: 350mA
• Voltage - Input: 2.5 ~ 6V
• Regulator Topology: Buck
• Board Type: Fully Populated
• Utilized Ic / Part: EL7535
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Power - Output: -
• Frequency - Switching: -

Absolute Maximum Ratings
V
LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (V
RSI, EN, V
PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: T
Electrical Specifications
DC CHARACTERISTICS
V
I
V
V
I
r
r
I
T
T
I
V
V
V
V
AC CHARACTERISTICS
f
t
t
t
IN
FB
DD
LMAX
EN
PWM
RSI
SS
POR
DS(ON)-PMOS
DS(ON)-NMOS
PARAMETER
OT,OFF
OT,ON
FB
IN
IN,ON
EN1
EN2
POR
OLPOR
, V
, I
, V
RSI
DD
, V
, V
DD
RSI1
RSI2
, POR to SGND . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
O
, FB to SGND . . . . . . . . . . . . . . . -0.3V to (V
Feedback Input Voltage
Feedback Input Current
Input Voltage
Maximum Voltage for Startup
Supply Current
PMOS FET Resistance
NMOS FET Resistance
Current Limit
Over-temperature Threshold
Over-temperature Hysteresis
EN, RSI Current
EN, RSI Rising Threshold
EN, RSI Falling Threshold
Minimum V
V
POR Voltage Drop
PWM Switching Frequency
Minimum RSI Pulse Width
Soft-start Time
Power-On Reset Delay Time
FB
Value
FB
DESCRIPTION
for POR, WRT Targeted
2
V
DD
(T
A
= V
= +25°C)
IN
= V
EN
= 3.3V, C
J
= T
IN
IN
C
+ +0.3V)
+ +0.3V)
= T
V
Hysterisis
PWM, V
EN = 0, V
V
V
T rising
T falling
V
V
V
V
V
I
Limits established by characterization and
are not production tested
SINK
IN
DD
DD
EN
DD
DD
FB
FB
1
A
= C
rising
, V
rising
falling
= 5V, wafer test only
= 5V, wafer test only
= 3.3V
= 3.3V
EL7535
= 5mA
2
RSI
IN
= 10µF, L = 1.8µH, V
IN
= V
= 0V and 3.3V
= V
DD
CONDITIONS
DD
Thermal Information
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
= 5V
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
= 5V
O
= 1.8V, unless otherwise specified.
2.19
MIN
780
100
2.5
0.8
1.1
86
-1
TYP
800
400
145
130
650
100
0.1
1.5
1.4
70
45
35
25
MAX
2.42
820
250
300
850
100
1.5
2.4
1.6
75
97
70
50
6
1
February 26, 2008
FN7003.6
UNIT
MHz
mΩ
mΩ
mV
mV
mV
ms
nA
µA
µA
°C
°C
µA
ns
µs
%
%
V
V
A
V
V