NBSG111BAEVB ON Semiconductor, NBSG111BAEVB Datasheet - Page 9

BOARD EVALUATION BBG NBSG111BA

NBSG111BAEVB

Manufacturer Part Number
NBSG111BAEVB
Description
BOARD EVALUATION BBG NBSG111BA
Manufacturer
ON Semiconductor
Datasheets

Specifications of NBSG111BAEVB

Main Purpose
Clock/Data Driver
Utilized Ic / Part
NBSG111
Primary Attributes
W/RSECL Outputs
Technology Type
Evaluation Board
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
For Use With/related Products
NBSG111
Other names
NBSG111BAEVB
NBSG111BAEVBOS
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
18. Measured using a 500 mV source, 50% duty cycle clock source. All outputs loaded with 50 W to V
19. t
20. Within−Device skew is measured between outputs under identical transitions and conditions on any one device.
21. Device−to−Device skew for identical transitions at identical V
22. V
23. Additive RMS jitter with 50% duty cycle clock signal at 5 GHz.
24. Additive Peak−to−Peak jitter with input NRZ data at PRBS 2
Table 9. AC CHARACTERISTICS
Symbol
V
t
t
t
t
t
t
V
t
t
PLH
PHL
SKEW
S
H
JITTER
r
f
OUTPP
INPP
(20% − 80%).
SKEW
INPP
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
(MAX) cannot exceed V
= |t
Output Voltage Amplitude
(See Figure 3) (Note 18)
Propagation Delay to Output Differential
Output Enable
Clock Select
Duty Cycle Skew (Note 19)
Within−Device Skew (Note 20)
Device−to−Device Skew (Note 21)
Setup Time to CLK (EN to Selected CLK0:1)
Hold Time (EN to Selected CLK0:1)
RMS Random Clock Jitter(Figure 3)
(Note 23)
Peak−to−Peak Data Dependent Jitter
(Note 24)
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 22)
Output Rise/Fall Times (20% − 80%) @ 1 GHz
PLH
− t
PHL
| for a nominal 50% differential clock input waveform (Figure 4).
550
450
350
250
150
Characteristic
Figure 3. Output Voltage Amplitude (V
CC
1
Input Frequency (f
− V
RMS JITTER (ps)
EE
V
Q AMP (mV)
CC
(applicable only when V
= 0 V; V
2
f
in
f
f
f
in
in
in
= 5.5 GHz
EE
= 5 Gb/s
< 3 GHz
= 5 GHz
INPUT FREQUENCY (GHz)
= −3.465 V to −2.375 V or V
Q, Q
http://onsemi.com
in
) at Ambient Temperature (Typical)
3
31
CC
2.5 V
−1 at 5 Gb/s.
Min
305
180
250
430
400
110
110
75
40
CC
levels.
3.3 V
9
−V
−40°C
EE
Typ
420
250
300
550
450
0.5
15
70
70
60
2
5
t 2600 mV).
4
OUTPP
2600
Max
350
700
500
2.0
15
20
85
80
CC
) / RMS Jitter vs.
= 2.375 V to 3.465 V; V
Min
305
150
250
430
400
110
110
75
40
5
25°C
Typ
420
220
300
550
450
0.5
15
70
70
14
60
2
5
2600
Max
350
700
500
2.0
CC
15
20
85
80
6
− 1.5 V. Input edge rates 40 ps
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Min
305
100
250
430
400
115
115
EE =
75
40
0 V
70°C
Typ
420
200
300
600
480
0.5
15
80
80
60
2
5
2600
Max
350
750
550
2.0
15
20
85
80
Unit
mV
mV
ps
ps
ps
ps
ps
ps

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