TLP227G-2(TP1,N,F) Toshiba, TLP227G-2(TP1,N,F) Datasheet - Page 60

• Manufacturer Part Number: TLP227G-2(TP1,N,F)
• Description: PHOTOCOUPLER RELAY SSR 8-SMD
• Manufacturer: Toshiba
• Series: TLP227G-2r

Specifications of TLP227G-2(TP1,N,F)

• Circuit: DPST (2 Form A)
• Output Type: AC, DC
• On-state Resistance: 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 8-SMD (300 mil)
• Load Voltage Rating: 350 V
• Load Current Rating: 0.1 A
• Contact Form: 2 Form A
• Output Device: MOSFET
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP227G2NFTR

9
The above operating life data are estimates extrapolated from long-term light output degradation over a single wafer lot and are shown as
reference only. Operating conditions exceeding the maximum ratings are not guaranteed.
10000000
1
1
1000000
100000
10000
140
120
100
140
120
100
GaAs LED Projected Light Output Degradation Data
GaAs LED Projected Operating Life Data
1000
Device Degradation
80
60
40
20
80
60
40
20
100
0
0
1
1
227
2.0
I
I
I
I
I
150
F
F
F
F
F
Failure criteria light output degradation Δ P O < –50%
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
10
100
Test conditions: I
Test conditions: I
85
3.0
60
100
100
Test time (h)
Test time (h)
25
F
F
= 50 mA, Ta = 40°C
= 10 mA, Ta = 40°C
0
1000
1000
I
F
4.0
= 10 mA
I
I
I
I
–30
F
F
F
F
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Ambient Temperature (°C)
Projected F50%
operating life
Projected F0.1%
operating life
10000
10000
–50
X-3σ
X-3σ
1 / K (x10
X
X
–73
5.0
100000
100000
-3
)
60
10000000
1000000
100000
10000
140
120
100
1000
80
60
40
20
100
0
1
227
2.0
I
I
I
I
I
150
F
F
F
F
F
Failure criteria light output degradation Δ P O < –30%
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
10
100
Test conditions: I
85
3.0
60
100
Test time (h)
25
F
= 20 mA, Ta = 40°C
0
1000
4.0
I
I
I
I
I
F
F
F
F
F
–30
= 10 mA
= 20 mA
= 30 mA
= 40 mA
= 50 mA
Ambient Temperature (°C)
Projected F50%
operating life
Projected F0.1%
operating life
10000
–50
X-3σ
1 / K (x10
X
–73
5.0
100000
-3
)