TLP3123(F) Toshiba, TLP3123(F) Datasheet - Page 2

PHOTORELAY MOSFET 1A 4-SOP

TLP3123(F)

Manufacturer Part Number
TLP3123(F)
Description
PHOTORELAY MOSFET 1A 4-SOP
Manufacturer
Toshiba
Series
TLP3123r
Datasheets

Specifications of TLP3123(F)

Circuit
SPST-NO (1 Form A)
Output Type
AC, DC
On-state Resistance
100 mOhm
Load Current
1A
Voltage - Input
1.33VDC
Voltage - Load
0 ~ 40 V
Mounting Type
Surface Mount
Termination Style
Gull Wing
Package / Case
4-SOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP3123F
Absolute Maximum Ratings
Recommended Operating Conditions
Individual Electrical Characteristics
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H. < = 60%) (Note 1)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) : Device considered a two-terminal device : LED side pins shorted together, and detector side pins shorted
Supply voltage
Forward current
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
Forward current
Forward current derating (Ta > = 25°C)
Reverse voltage
Junction temperature
Off-state output terminal voltage
On-state current
On-state current derating (Ta > = 50°C)
Pulse on-state current (t = 100 ms)
Power dissipation (Ta = 50°C)
Junction temperature
Forward voltage
Reverse current
Capacitance
Off-state current
Capacitance
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Characteristic
together.
Characteristic
Characteristic
(Ta = 25°C)
Symbol
C
I
OFF
V
C
OFF
I
R
F
T
Symbol
(Ta = 25°C)
V
T
I
V
V = 0, f = 1 MHz
V
V = 0, f = 1 MHz
F
I
opr
DD
F
R
OFF
= 10 mA
= 5 V
ΔI
Symbol
ΔI
V
I
ON
T
T
BV
= 30 V
T
I
ONP
PO
V
OFF
F
ON
I
T
T
opr
stg
sol
F
/°C
R
2
j
j
S
/°C
Test Condition
Min.
25
5
−55~125
Typ.
−40~85
Rating
10
−13.3
1500
−0.3
125
130
125
260
30
40
5
1
2
Max.
32
20
60
mA/°C
mA/°C
Vrms
Unit
mW
mA
°C
°C
°C
°C
°C
V
V
A
A
Unit
mA
°C
1.18
Min.
V
Typ.
1.33
300
70
Max.
2007-10-01
1.48
TLP3123
10
1
Unit
μA
pF
nA
pF
V

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