TLP598G Toshiba, TLP598G Datasheet - Page 69

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TLP598G

Manufacturer Part Number
TLP598G
Description
PHOTOCOUPLER RELAY SSR 6-DIP
Manufacturer
Toshiba
Series
TLP598Gr
Datasheets

Specifications of TLP598G

Circuit
SPST-NO (1 Form A)
Output Type
AC, DC
On-state Resistance
12 Ohm
Load Current
150mA
Voltage - Input
1.4VDC
Voltage - Load
0 ~ 400 V
Mounting Type
Through Hole
Termination Style
PC Pin
Package / Case
6-DIP (0.300", 7.62mm)
Input Type
DC
Input Voltage (max)
1.7V
Output Voltage (max)
400V
Input Current (max)
30mA
Output Current
150mA
Isolation Voltage
2.5kV
Circuit Arrangement
1 Form A
Package Type
PDIP
Output Device
MOSFET
Pin Count
5
Mounting
Through Hole
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Rad Hardened
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TLP598G
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
TLP598GA
Manufacturer:
AMLOGIC
Quantity:
726
IGM Selection
TLP109 ( IGM )
TLP559 ( IGM )
TLP759 ( IGM )
Driving the Gate of a 50-A-Class IGBT Module
Driving the Gate of a 400-A-Class IGBT Module
Driving the Gate of an IGBT Module Using an IGM Photocoupler
5 V
5 V
Part Number
10 mA
LSTTL
LSTTL
390 Ω
390 Ω
8 mA
8 mA
TLP351/ TLP2541
TLP109 ( IGM )
TLP559 ( IGM )
TLP759 ( IGM )
1
2
3
4
1
2
3
4
TLP350
SO6
DIP8
DIP8
Package
8
7
6
5
8
7
6
5
(Vrms)
3750
2500
5000
BVs
0.1 μF
0.1 μF
20 V / 30 V
V
V
V
O
max
CC
/V
EE
CC
V
V
CC
EE
+15 V
–10 V
25% min
75% max
@I
V
V
CC
O
F
= 0.4 V
CTR
= 10 mA
= 4.5 V
69
0.7 μs max
@I
R
t
L
PLH
F
= 20 kΩ
= 10 mA
The TLP350 and TLP700 can drive a medium-power
IGBT directly.
The TLP351, TLP701, TLP705or TLP2541
high-speed photo-IC photocoupler and two booster
transistors can drive a high power IGBT.
IGM photocouplers are suitable for driving an
intelligent power module (IPM). These
photocouplers guarantee symmetrical low-to-high
and high-to-low propagation delays (
and provides a high common mode transient
immunity.
t
PHL
10000 V / μs min
@I
R
V
CM
L
F
= 20 kΩ
= 0 mA
= 1500 V p-p
CM
H
– 10000 V / μs min
@I
R
V
l t
CM
L
F
= 20 kΩ
PLH
= 10 mA
= 1500 V p-p
CM
-
t
PHL
L
l)

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