FDD8444 Fairchild Semiconductor, FDD8444 Datasheet
![MOSFET N-CH 40V 145A DPAK](/photos/5/57/55764/fdd8444_sml.jpg)
FDD8444
Specifications of FDD8444
Available stocks
Related parts for FDD8444
FDD8444 Summary of contents
Page 1
... GS Low Miller Charge Low Q Body Diode rr UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant ©2006 Fairchild Semiconductor Corporation FDD8444 Rev B (W) ® MOSFET Applications Automotive Engine Control = 50A D Powertrain Management Solenoid and Motor Drivers Electronic Transmission Distributed Power Architecture and VRMs ...
Page 2
... Total Gate Charge at 5V g(5) Q Threshold Gate Charge g(TH) Q Gate to Source Gate Charge gs Q Gate Charge Threshold to Plateau gs2 Q Gate to Drain “Miller“ Charge gd FDD8444 Rev B ( 25°C unless otherwise noted C Parameter = 10V) (Note C/W) θJA (Note 2) 2 copper pad area ...
Page 3
... This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems FDD8444 Rev B ( ...
Page 4
... SINGLE PULSE 0. Figure 3. Normalized Maximum Transient Thermal Impedance 2000 V = 10V TRANSCONDUCTANCE GS MAY LIMIT CURRENT 1000 IN THIS REGION 100 SINGLE PULSE FDD8444 Rev B (W) 160 140 120 100 125 150 175 ( Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION(s) -3 ...
Page 5
... DUTY CYCLE = 0.5% MAX GATE TO SOURCE VOLTAGE GS Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD8444 Rev B (W) 500 10us ≠ 100 100us 10 1ms 10ms DC 1 0.01 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching ...
Page 6
... T , JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 1000 C rss f = 1MHz 100 0 DRAIN TO SOURCE VOLTAGE DS Figure 13. Capacitance vs Drain to Source Voltage FDD8444 Rev B (W) 1. 250 μ 1.10 1.05 1.00 0.95 0.90 80 120 160 200 - Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ...
Page 7
... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Green FPS™ e-Series™ Build it Now™ GTO™ CorePLUS™ i-Lo™ ...