HFA3096 Intersil Corporation, HFA3096 Datasheet

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HFA3096

Manufacturer Part Number
HFA3096
Description
Ultra High Frequency Transistor Arrays
Manufacturer
Intersil Corporation
Datasheet

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Ultra High Frequency Transistor Arrays
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of five dielectrically isolated
transistors on a common monolithic substrate. The NPN
transistors exhibit a f
provide a f
making them ideal for high frequency amplifier and mixer
applications.
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an
NPN-PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
Intersil provides an Application Note illustrating the use of
these devices as RF amplifiers. For more information, visit
our website at www.intersil.com.
Ordering Information
*Add “96” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
HFA3046B
HFA3046BZ (Note)
HFA3096B
HFA3096BZ (Note)
HFA3127B
HFA3127BZ (Note)
HFA3127R
HFA3127RZ (Note)
HFA3128B
HFA3128BZ (Note)
HFA3128R
HFA3128RZ (Note)
PART NUMBER*
T
of 5.5GHz. Both types exhibit low noise (3.5dB),
T
of 8GHz while the PNP transistors
HFA3046B
HFA3046BZ
HFA3096B
HFA3096BZ
HFA3127B
HFA3127BZ
127
127Z
HFA3128B
HFA3128BZ
128
128Z
®
1
PART MARKING
Data Sheet
HFA3046, HFA3096, HFA3127, HFA3128
1-888-INTERSIL or 1-888-468-3774
TEMP. RANGE (°C)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Features
• NPN Transistor (f
• NPN Current Gain (h
• NPN Early Voltage (V
• PNP Transistor (f
• PNP Current Gain (h
• PNP Early Voltage (V
• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector to Collector Leakage . . . . . . . . . . . . . . . . . .<1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
December 21, 2005
Arrays
All other trademarks mentioned are the property of their respective owners.
|
14 Ld SOIC
14 Ld SOIC (Pb-free)
16 Ld SOIC
16 Ld SOIC (Pb-free)
16 Ld SOIC
16 Ld SOIC (Pb-free)
16 Ld 3x3 QFN
16 Ld 3x3 QFN (Pb-free)
16 Ld SOIC
16 Ld SOIC (Pb-free)
16 Ld 3x3 QFN
16 Ld 3x3 QFN (Pb-free)
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved
T
T
PACKAGE
) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
FE
FE
A
A
) . . . . . . . . . . . . . . . . . . . . . . . 50V
) . . . . . . . . . . . . . . . . . . . . . . . .20V
). . . . . . . . . . . . . . . . . . . . . . . . 130
). . . . . . . . . . . . . . . . . . . . . . . . . 60
M14.15
M14.15
M16.15
M16.15
M16.15
M16.15
L16.3x3
L16.3x3
M16.15
M16.15
L16.3x3
L16.3x3
PKG. DWG. #
FN3076.13

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HFA3096 Summary of contents

Page 1

... The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility ...

Page 2

... HFA3046, HFA3096, HFA3127, HFA3128 Pinouts HFA3046 TOP VIEW HFA3096 TOP VIEW TOP VIEW ...

Page 3

... HFA3046, HFA3096, HFA3127, HFA3128 Absolute Maximum Ratings Collector to Emitter Voltage (Open Base Collector to Base Voltage (Open Emitter 12V Emitter to Base Voltage (Reverse Bias 5.5V Collector Current (100% Duty Cycle 18.5mA at T Peak Collector Current (Any Condition 65mA Operating Information Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C CAUTION: Stresses above those listed in “ ...

Page 4

... HFA3046, HFA3096, HFA3127, HFA3128 Electrical Specifications T = 25°C (Continued) A PARAMETER Power Gain-Bandwidth Product 10mA MAX Base to Emitter Capacitance V BE Collector to Base Capacitance V CB Electrical Specifications T = 25°C A PARAMETER DC PNP CHARACTERISTICS Collector to Base Breakdown I = -100µ Voltage, V (BR)CBO Collector to Emitter Breakdown I = -100µ ...

Page 5

... HFA3046, HFA3096, HFA3127, HFA3128 Electrical Specifications T = 25°C (Continued) A PARAMETER DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046 Input Offset Voltage I = 10mA Input Offset Current I = 10mA Input Offset Voltage 10mA S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site. ...

Page 6

... HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of NPN 3 µ µm Transistor FREQ. (Hz PHASE and I = 10mA CE C 1.0E+08 0.72 -16.43 2.0E+08 0.67 -31.26 3.0E+08 0.60 -43.76 4.0E+08 0.53 -54.00 5.0E+08 0.47 -62.38 6.0E+08 0.42 -69.35 7.0E+08 0.37 -75.26 8.0E+08 0.34 -80.36 9.0E+08 0.31 -84.84 1.0E+09 0.29 -88.83 1.1E+09 0.27 -92.44 1.2E+09 0.25 -95.73 1.3E+09 0.24 -98.75 1.4E+09 0.22 -101.55 1.5E+09 0.21 -104.15 1.6E+09 0.20 -106.57 1.7E+09 0.20 -108.85 1.8E+09 0.19 -110.98 1.9E+09 0.18 -113.00 2.0E+09 0.18 -114.90 2.1E+09 0.17 -116.69 2.2E+09 0.17 -118.39 2.3E+09 0.16 -120.01 2.4E+09 0.16 -121.54 2.5E+09 0.16 -122.99 2.6E+09 0.15 -124.37 2.7E+09 0.15 -125.69 2.8E+09 0.15 -126.94 2.9E+09 0.15 -128.14 3.0E+09 0.14 -129.27 Common Emitter S-Parameters of PNP 3 µ µm Transistor FREQ ...

Page 7

... HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 µ µm Transistor FREQ. (Hz PHASE(S 11 6.0E+08 0.47 -75.83 7.0E+08 0.43 -83.18 8.0E+08 0.40 -89.60 9.0E+08 0.38 -95.26 1.0E+09 0.36 -100.29 1.1E+09 0.34 -104.80 1.2E+09 0.33 -108.86 1.3E+09 0.32 -112.53 1.4E+09 0.30 -115.86 1.5E+09 0.30 -118.90 1.6E+09 0.29 -121.69 1.7E+09 0.28 -124.24 1.8E+09 0.28 -126.59 1.9E+09 0.27 -128.76 2.0E+09 0.27 -130.77 2.1E+09 0.26 -132.63 2.2E+09 0.26 -134.35 2.3E+09 0.26 -135.96 2.4E+09 0.25 -137.46 2.5E+09 0.25 -138.86 2.6E+09 0.25 -140.17 2.7E+09 0.25 -141.39 2.8E+09 0.25 -142.54 2.9E+09 0.24 -143.62 3.0E+09 0.24 -144. -5V -10mA CE C 1.0E+08 0.58 -23.24 2.0E+08 0.53 -44.07 3.0E+08 0.48 -61.50 4.0E+08 0.43 -75.73 5.0E+08 0.40 -87.36 6.0E+08 0.37 -96.94 7.0E+08 0.35 -104.92 8.0E+08 0.33 -111.64 9 ...

Page 8

... HFA3046, HFA3096, HFA3127, HFA3128 Common Emitter S-Parameters of PNP 3 µ µm Transistor FREQ. (Hz PHASE(S 11 1.3E+09 0.29 -133.46 1.4E+09 0.29 -136.33 1.5E+09 0.28 -138.89 1.6E+09 0.28 -141.17 1.7E+09 0.28 -143.21 1.8E+09 0.28 -145.06 1.9E+09 0.27 -146.73 2.0E+09 0.27 -148.26 2.1E+09 0.27 -149.65 2.2E+09 0.27 -150.92 2.3E+09 0.27 -152.10 2.4E+09 0.27 -153.18 2.5E+09 0.27 -154.17 2.6E+09 0.26 -155.10 2.7E+09 0.26 -155.96 2.8E+09 0.26 -156.76 2.9E+09 0.26 -157.51 3.0E+09 0.26 -158.21 Typical Performance Curves COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1 ...

Page 9

... HFA3046, HFA3096, HFA3127, HFA3128 Typical Performance Curves 160 140 120 100 1µ 10µ 100µ 1m COLLECTOR CURRENT (A) FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT -25 -20 -15 - COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE ...

Page 10

... HFA3046, HFA3096, HFA3127, HFA3128 Die Characteristics DIE DIMENSIONS: 53 mils x 52 mils x 19 mils 1340µm x 1320µm x 483µm METALLIZATION: Type: Metal 1: AlCu(2%)/TiW Å Å ±0.4k Thickness: Metal 1: 8k Type: Metal 2: AlCu(2%) Å Å Thickness: Metal 2: 16k ±0.8k Metallization Mask Layout ...

Page 11

... HFA3046, HFA3096, HFA3127, HFA3128 Small Outline Plastic Packages (SOIC) N INDEX 0.25(0.010) H AREA E - SEATING PLANE - -C- α 0.10(0.004) 0.25(0.010 NOTES: 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. ...

Page 12

... HFA3046, HFA3096, HFA3127, HFA3128 Small Outline Plastic Packages (SOIC) N INDEX 0.25(0.010) H AREA E - SEATING PLANE - -C- α 0.10(0.004) 0.25(0.010 NOTES: 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. ...

Page 13

... HFA3046, HFA3096, HFA3127, HFA3128 Quad Flat No-Lead Plastic Package (QFN) Micro Lead Frame Plastic Package (MLFP D INDEX AREA AREA TOP VIEW 0. SEATING PLANE A3 SIDE VIEW 0. (DATUM B) ...

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