IRF740LC Vishay, IRF740LC Datasheet

N CHANNEL MOSFET, 400V, 10A, TO-220

IRF740LC

Manufacturer Part Number
IRF740LC
Description
N CHANNEL MOSFET, 400V, 10A, TO-220
Manufacturer
Vishay
Datasheet

Specifications of IRF740LC

Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
550mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF740LC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF740LC
Manufacturer:
IR
Quantity:
12 500
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91053
S11-0507-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 10 A, dI/dt ≤ 120 A/μs, V
= 50 V, starting T
(Ω)
TO-220AB
D
a
J
= 25 °C, L = 9.1 mH, R
c
a
a
b
DD
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
400
39
10
19
This datasheet is subject to change without notice.
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
0.55
V
GS
AS
6-32 or M3 screw
at 10 V
= 10 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220AB
IRF740LCPbF
SiHF740LC-E3
IRF740LC
SiHF740LC
= 100 °C
= 25 °C
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,
allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of Power
MOSFETs ofter the designer a new standard in power
transistors for switching applications.
SYMBOL
T
dV/dt
J
V
iss
V
E
E
I
I
P
, T
DM
I
AR
DS
GS
AR
D
AS
D
, C
stg
IRF740LC, SiHF740LC
oss
GS
, C
Rating
rss
- 55 to + 150
LIMIT
300
± 30
400
520
125
6.3
1.0
4.0
1.1
10
32
10
13
10
www.vishay.com/doc?91000
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
1

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IRF740LC Summary of contents

Page 1

... C SYMBOL ° 100 ° °C C dV/ for screw = 25 Ω (see fig. 12 ≤ 150 °C. This datasheet is subject to change without notice. IRF740LC, SiHF740LC Vishay Siliconix RoHS* Rating GS COMPLIANT , iss oss rss LIMIT UNIT V 400 ± 6.3 I ...

Page 2

... IRF740LC, SiHF740LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Transfer Characteristics C 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 150 °C 0 91053_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF740LC, SiHF740LC Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( ...

Page 4

... IRF740LC, SiHF740LC Vishay Siliconix 2000 MHz iss 1600 rss gd C iss oss ds 1200 C oss 800 400 C rss Drain-to-Source Voltage ( 91053_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 320 200 Total Gate Charge (nC) 91053_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit 150 125 Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF740LC, SiHF740LC Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

Page 6

... IRF740LC, SiHF740LC Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91053_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel This datasheet is subject to change without notice. IRF740LC, SiHF740LC Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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