IRF7425 International Rectifier, IRF7425 Datasheet

MOSFET P-CH 20V 15A 8-SOIC

IRF7425

Manufacturer Part Number
IRF7425
Description
MOSFET P-CH 20V 15A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7425

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 4.5V
Input Capacitance (ciss) @ Vds
7980pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7425

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7425
Manufacturer:
Techwell
Quantity:
28
Part Number:
IRF7425
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7425TRPBF
Manufacturer:
IR
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31 000
Part Number:
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Manufacturer:
IR
Quantity:
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Company:
Part Number:
IRF7425TRPBF
Quantity:
12 000
Company:
Part Number:
IRF7425TRPBF
Quantity:
10 420
Absolute Maximum Ratings
Thermal Resistance
These P-Channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
®
Power MOSFETs from
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
G
S
S
S
V
20V
DSS
1
2
3
4
Top View
R
HEXFET
8
6
5
7
DS(on)
-55 to + 150
8.2@V
13@V
Max.
Max.
± 12
50
D
D
D
D
-20
-15
-12
-60
2.5
1.6
A
20
GS
GS
max (m
®
= -2.5V
IRF7425
= -4.5V
Power MOSFET
SO-8
PD- 94022A
-15A
-13A
mW/°C
Units
Units
I
°C/W
D
W
°C
V
A
V
1
11/20/01

Related parts for IRF7425

IRF7425 Summary of contents

Page 1

... Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET V R DSS DS(on) 20V 8.2@V 13 Top View Max. @ -4. -4. 150 Max. PD- 94022A IRF7425 ® Power MOSFET max ( -4.5V -15A GS = -2.5V -13A SO-8 Units -20 V -15 -12 A -60 2.5 W 1.6 20 mW/°C ± °C Units 50 °C/W ...

Page 2

... IRF7425 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 10 1 ° 0.1 0.1 100 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -15V 0.0 2.0 2.2 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7425 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V -1.0V -1.0V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS -15A ...

Page 4

... IRF7425 12000 1MHz iss rss gd 10000 oss iss 8000 6000 4000 C oss 2000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 0.1 0.2 0.4 0.6 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6 ...

Page 5

... RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7425 D.U. Pulse Width µs Duty Factor ...

Page 6

... IRF7425 0.015 0.010 0.005 1.0 2.0 3.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.010 0.009 0.008 0.007 -15A 0.006 0.005 4.0 5.0 0 Fig 13. Typical On-Resistance Vs. 12V V GS Fig 14b. Gate Charge Test Circuit ...

Page 7

... Temperature ( °C ) Fig 15. Typical Vgs(th) Variance Vs. Juction Temperature www.irf.com 120 100 -250µ 100 125 150 0.001 Fig 16. Typical Power Vs. Time IRF7425 0.010 0.100 1.000 10.000 100.000 Time (sec) 7 ...

Page 8

... IRF7425 SO-8 Package Details 0.25 [.010 0.25 [.010 NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. ...

Page 9

... Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 11/01 IRF7425 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12 ...

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