IRF9Z24 Vishay, IRF9Z24 Datasheet
IRF9Z24
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IRF9Z24 Summary of contents
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... TO-220 contribute to its wide acceptance throughout the industry. TO-220 IRF9Z24PbF SiHF9Z24-E3 IRF9Z24 SiHF9Z24 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12 ≤ 175 ° IRF9Z24, SiHF9Z24 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT ± 7 0.40 E 240 6.0 ...
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... IRF9Z24, SiHF9Z24 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... DS , 91090_02 Fig Typical Output Characteristics, T Document Number: 91090 S09-0015-Rev. A, 19-Jan- µs Pulse Width ° 91090_03 = 25 ° 4 µs Pulse Width T = 175 ° 91090_04 = 175 °C C IRF9Z24, SiHF9Z24 Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3.0 ...
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... IRF9Z24, SiHF9Z24 Vishay Siliconix 1250 MHz iss rss 1000 oss 750 500 250 Drain-to-Source Voltage ( 91090_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91090_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C 10 oss C rss 91090_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91090 S09-0015-Rev. A, 19-Jan-09 150 125 175 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF9Z24, SiHF9Z24 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF9Z24, SiHF9Z24 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 800 Top Bottom 600 400 200 100 125 50 Starting T , Junction Temperature (°C) 91090_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 4 7 150 175 Current regulator Same type as D.U.T. 50 kΩ ...
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... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRF9Z24, SiHF9Z24 Vishay Siliconix + + P. www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...