IRF9Z30 Vishay, IRF9Z30 Datasheet

IRF9Z30

Manufacturer Part Number

IRF9Z30

Description

MOSFET P-CH 50V 18A TO-220AB

Manufacturer

Vishay

Series

HEXFET®r

Datasheet

1.IRF9Z30.pdf (6 pages)

Specifications of IRF9Z30

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

140 mOhm @ 9.3A, 10V

Drain To Source Voltage (vdss)

50V

Current - Continuous Drain (id) @ 25° C

18A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

39nC @ 10V

Input Capacitance (ciss) @ Vds

900pF @ 25V

Power - Max

74W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.14 Ohms

Drain-source Breakdown Voltage

- 50 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

18 A

Power Dissipation

74 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF9Z30

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF9Z30

Manufacturer:

NPPN

Quantity:

6 210

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