PESD5V0L4UG,115 NXP Semiconductors, PESD5V0L4UG,115 Datasheet - Page 14

DIODE LOW ESD PROTECTION SOT353

PESD5V0L4UG,115

Manufacturer Part Number
PESD5V0L4UG,115
Description
DIODE LOW ESD PROTECTION SOT353
Manufacturer
NXP Semiconductors
Type
TVSr
Series
-r
Datasheet

Specifications of PESD5V0L4UG,115

Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
5.32V
Power (watts)
30W
Polarization
4 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
10 V
Operating Voltage
5 V
Breakdown Voltage
6.8 V
Termination Style
SMD/SMT
Peak Surge Current
2.5 A
Peak Pulse Power Dissipation
30 W
Capacitance
19 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.35 mm W x 2.2 mm L x 1.1 mm H
Number Of Elements
4
Operating Temperature Classification
Military
Reverse Breakdown Voltage
6.46V
Reverse Stand-off Voltage
5V
Leakage Current (max)
25nA
Peak Pulse Current
2.5A
Test Current (it)
1mA
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Pin Count
5
Capacitance Value
19 pF
Maximum Clamping Voltage
13 V
Direction Type
Uni-Directional
Number Of Elements Per Chip
4
Esd Protection Voltage
10@HBM|20@Contact Disc KV
Maximum Leakage Current
0.025 uA
Maximum Working Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4051-2
934057785115
PESD5V0L4UG T/R
PESD5V0L4UG T/R
NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Fig 16. Reflow soldering footprint PESDxL4UW (SOT665)
Reflow soldering is the only recommended soldering method.
2.00 1.70 1.00
Low capacitance unidirectional quadruple ESD protection diode arrays
0.075
Rev. 04 — 28 February 2008
0.70
(2 )
solder lands
solder resist
0.45
(2 )
placement area
occupied area
2.45
2.10
1.20
2.20
1.60
PESDxL4UF/G/W
1.375
1.25
Dimensions in mm
0.30
0.375
0.15
(2x)
(2 )
© NXP B.V. 2008. All rights reserved.
0.40
(5 )
0.55
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