PESD5V0L4UG,115 NXP Semiconductors, PESD5V0L4UG,115 Datasheet - Page 7

• Manufacturer Part Number: PESD5V0L4UG,115
• Description: DIODE LOW ESD PROTECTION SOT353
• Manufacturer: NXP Semiconductors
• Type: TVSr
• Series: -r

Specifications of PESD5V0L4UG,115

• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.32V
• Power (watts): 30W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 10 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 2.5 A
• Peak Pulse Power Dissipation: 30 W
• Capacitance: 19 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.35 mm W x 2.2 mm L x 1.1 mm H
• Number Of Elements: 4
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 6.46V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 25nA
• Peak Pulse Current: 2.5A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 5
• Capacitance Value: 19 pF
• Maximum Clamping Voltage: 13 V
• Direction Type: Uni-Directional
• Number Of Elements Per Chip: 4
• Esd Protection Voltage: 10@HBM|20@Contact Disc KV
• Maximum Leakage Current: 0.025 uA
• Maximum Working Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4051-2; 934057785115; PESD5V0L4UG T/R; PESD5V0L4UG T/R

NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Fig 3. Non-repetitive peak reverse current as a
Fig 5. Diode capacitance as a function of reverse
I
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
(pF)
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
ZSM
(A)
C
10
d
10
26
22
18
14
10
1
6
1
10
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
0
amb
2
= 25 C
1
amb
10
= 25 C
1
2
(1)
(2)
3
1
(1)
(2)
Low capacitance unidirectional quadruple ESD protection diode arrays
t
p
4
006aab134
(ms)
006aab136
V
R
(V)
Rev. 04 — 28 February 2008
10
5
Fig 4. Non-repetitive peak reverse power dissipation
Fig 6. Relative variation of reverse current as a
I
R(25 C)
P
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
(W)
I
ZSM
R
10
10
10
10
1
1
2
10
1
T
as a function of pulse duration; maximum
values
function of junction temperature; typical values
75
amb
2
= 25 C
25
PESDxL4UF/G/W
10
1
25
75
1
(1)
(2)
© NXP B.V. 2008. All rights reserved.
125
t
p
006aab135
(ms)
006aab137
T
j
( C)
175
10
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