PESD5V0L4UG,115 NXP Semiconductors, PESD5V0L4UG,115 Datasheet - Page 5

• Manufacturer Part Number: PESD5V0L4UG,115
• Description: DIODE LOW ESD PROTECTION SOT353
• Manufacturer: NXP Semiconductors
• Type: TVSr
• Series: -r

Specifications of PESD5V0L4UG,115

• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.32V
• Power (watts): 30W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 10 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 2.5 A
• Peak Pulse Power Dissipation: 30 W
• Capacitance: 19 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.35 mm W x 2.2 mm L x 1.1 mm H
• Number Of Elements: 4
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 6.46V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 25nA
• Peak Pulse Current: 2.5A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 5
• Capacitance Value: 19 pF
• Maximum Clamping Voltage: 13 V
• Direction Type: Uni-Directional
• Number Of Elements Per Chip: 4
• Esd Protection Voltage: 10@HBM|20@Contact Disc KV
• Maximum Leakage Current: 0.025 uA
• Maximum Working Voltage: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4051-2; 934057785115; PESD5V0L4UG T/R; PESD5V0L4UG T/R

NXP Semiconductors
6. Characteristics
PESDXL4UF_G_W_4
Product data sheet
Fig 1. 8/20 s pulse waveform according to
(%)
I
PP
120
80
40
0
IEC 61000-4-5
0
10
100 % I
Table 9.
T
Symbol Parameter
Per diode
V
I
V
RM
amb
e
RWM
BR
PP
t
; 8 s
20
= 25 C unless otherwise specified.
50 % I
reverse standoff voltage
reverse leakage current
breakdown voltage
Characteristics
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PP
30
Low capacitance unidirectional quadruple ESD protection diode arrays
; 20 s
001aaa630
t ( s)
Rev. 04 — 28 February 2008
40
Conditions
V
V
I
R
RWM
RWM
Fig 2. ESD pulse waveform according to
= 1 mA
= 3.3 V
= 5.0 V
100 %
10 %
90 %
IEC 61000-4-2
I
PP
t
r
30 ns
PESDxL4UF/G/W
0.7 ns to 1 ns
Min
-
-
-
-
5.32
6.46
60 ns
Typ
-
-
75
5
5.6
6.8
© NXP B.V. 2008. All rights reserved.
Max
3.3
5.0
300
25
5.88
7.14
001aaa631
t
Unit
V
V
nA
nA
V
V
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