C8051F040-GQ Silicon Laboratories Inc, C8051F040-GQ Datasheet - Page 35

• Manufacturer Part Number: C8051F040-GQ
• Description: IC 8051 MCU 64K FLASH 100TQFP
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F04xr

Specifications of C8051F040-GQ

• Program Memory Type: FLASH
• Program Memory Size: 64KB (64K x 8)
• Package / Case: 100-TQFP, 100-VQFP
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: CAN, EBI/EMI, SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 64
• Ram Size: 4.25K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x8b, 13x12b; D/A 2x10b, 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051F0x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 4.25 KB
• Interface Type: CAN/SMBus/SPI/UART
• Maximum Clock Frequency: 25 MHz
• Number Of Programmable I/os: 64
• Number Of Timers: 5
• Operating Supply Voltage: 2.7 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F040DK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 8-bit or 13-ch x 12-bit
• On-chip Dac: 2-ch x 12-bit
• No. Of I/o's: 64
• Ram Memory Size: 4352Byte
• Cpu Speed: 25MHz
• No. Of Timers: 5
• Rohs Compliant: Yes
• Data Rom Size: 64 KB
• A/d Bit Size: 12 bit
• A/d Channels Available: 13
• Height: 1 mm
• Length: 14 mm
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Width: 14 mm
• Package: 100TQFP
• Device Core: 8051
• Family Name: C8051F04x
• Maximum Speed: 25 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 336-1205 - DEV KIT FOR F040/F041/F042/F043
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1204

2.
Table 2.1. Absolute Maximum Ratings*
Ambient temperature under bias
Storage Temperature
Voltage on any Pin (except V
pins) with respect to DGND
Voltage on any Port I/O Pin, /RST, and JTAG pins with
respect to DGND
Voltage on V
Maximum Total current through V
and AGND
Maximum output current sunk by any Port pin
Maximum output current sunk by any other I/O pin
Maximum output current sourced by any Port pin
Maximum output current sourced by any other I/O pin
*Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
Absolute Maximum Ratings
This is a stress rating only and functional operation of the devices at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.

Due to special I/O design requirements of the High Voltage Difference Amplifier, undue electrical over-voltage
stress (i.e., ESD) experienced by these pads may result in impedance degradation of these inputs (HVAIN+
and HVAIN–). For this reason, care should be taken to ensure proper handling and use as typically required to
prevent ESD damage to electrostatically sensitive CMOS devices (e.g., static-free workstations, use of
grounding straps, over-voltage protection in end-applications, etc.)
DD
with respect to DGND
Parameter
DD
, Port I/O, and JTAG
DD
, AV+, DGND,
Rev. 1.5
C8051F040/1/2/3/4/5/6/7
Conditions
–0.3
–0.3
–0.3
Min
–55
–65
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
V
Max
125
150
800
100
100
DD
0.3
5.8
4.2
50
50
+
Units
mA
mA
mA
mA
mA
°C
°C
V
V
V
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