MC908JL16CDWE Freescale Semiconductor, MC908JL16CDWE Datasheet - Page 36

• Manufacturer Part Number: MC908JL16CDWE
• Description: IC MCU 16K FLASH 8MHZ 28-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908JL16CDWE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: I²C, SCI
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 23
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Controller Family/series: HC08
• No. Of I/o's: 23
• Ram Memory Size: 512Byte
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: I2C, SCI
• Rohs Compliant: Yes
• Processor Series: HC08JL
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SCI
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 23
• Number Of Timers: 4
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908JL16E, M68CBL05CE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• For Use With: DEMO908JL16E - BOARD DEMO FOR MC908JL16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Memory
2.5.5 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0 or $XXE0. Use this
step-by-step procedure to program a row of FLASH memory:
Figure 2-4
This program sequence is repeated throughout the memory until all data is programmed.
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10. Clear the PGM bit.
11. Wait for time, t
12. Clear the HVEN bit.
13. After time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of the row to be programmed.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address to be programmed.
8. Wait for time, t
9. Repeat steps 7 and 8 until all bytes within the row are programmed.
address and data for programming.
shows a flowchart of the programming algorithm.
The time between each FLASH address change (step 7 to step 7), or the
time between the last FLASH addressed programmed to clearing the PGM
bit (step 7 to step 10), must not exceed the maximum programming time,
t
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
PROG
RCV
PROG
NVH
max.
(1 µs), the memory can be accessed in read mode again.
NVS
PGS
(5 µs).
(30 µs).
(10 µs).
(5 µs).
MC68HC908JL16 Data Sheet, Rev. 1.1
NOTE
Freescale Semiconductor