SUD50P04-13L-GE3 Vishay, SUD50P04-13L-GE3 Datasheet - Page 2

• Manufacturer Part Number: SUD50P04-13L-GE3
• Description: MOSFET P-CH D-S 40V DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50P04-13L-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 55.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 78W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 3W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUD50P04-13L-GE3TR

SUD50P04-13L
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Pulse Current
Forward Voltage
Source-Drain Reverse Recovery Time
c
b
c
a
c
c
c
c
c
a
a
J
= 25 °C, unless otherwise noted
a
V
Symbol
V
r
(BR)DSS
I
DS(on)
t
t
I
I
C
GS(th)
D(on)
C
C
V
Q
Q
d(on)
d(off)
GSS
I
DSS
Q
g
R
SM
t
oss
t
t
rss
SD
iss
rr
fs
gs
gd
r
f
g
g
New Product
V
I
V
V
D
V
DS
GS
DS
≅ - 50 A, V
DS
= - 20 V, V
I
= - 10 V, I
= - 40 V, V
F
= - 25 V, V
V
V
V
V
V
V
V
V
V
= - 50 A, di/dT = 100 A/µs
DS
DS
GS
I
GS
DS
DD
GS
DS
DS
F
Test Conditions
= - 50 A, V
= V
= - 5 V, V
= - 4.5 V, I
= 0 V, I
= 0 V, V
= - 10 V, I
= - 20 V, R
= - 40 V, V
= - 15 V, I
GEN
f = 1 MHz
GS
D
GS
GS
= - 30 A, T
GS
, I
= - 10 V, R
= - 10 V, I
D
D
= 0 V, T
GS
= 0 V, f = 1 MHz
GS
= - 250 µA
= - 250 µA
D
D
GS
D
L
GS
= ± 20 V
= - 30 A
= - 30 A
= - 10 V
= - 20 A
= 0.4 Ω
= 0 V
= 0 V
J
J
D
= 125 °C
= 125 °C
g
= - 50 A
= 2.5 Ω
- 1.0
Min
- 40
- 50
15
0.0105
0.017
3120
- 1.0
Typ
440
320
S-71660-Rev. B, 06-Aug-07
4.3
63
13
16
15
18
60
47
36
Document Number: 73009
± 100
0.013
0.020
0.022
- 100
Max
- 3.0
- 1.5
- 50
- 1
95
25
30
90
70
55
Unit
nA
µA
nC
pF
ns
ns
Ω
Ω
V
A
S
V